Module "Easy 1B, 2B"
Due to its high efficiency, operational costs can also be reduced. A power module with high power density.
Infineon Technologies' "Easy 1B, 2B" is a power module equipped with SiC MOSFETs. By combining the features of the Easy power module, which has become the standard for low stray inductance, with the characteristics of Infineon's 1200V CoolSiC MOSFET chips, it is possible to reduce system costs and operating costs. This product is immediately usable for applications that require short-circuit resistance. 【Features】 ■ Approximately 80% reduction in switching losses compared to Si ■ Low conduction losses due to linear output characteristics ■ A wide range of commercially available CoolSiC MOSFETs in the Easy package ■ Excellent reliability of the gate oxide layer ■ Low reverse recovery charge in the body diode ■ High threshold voltage of over 4V ■ Short-circuit withstand time of 2μs *For more details, please refer to the PDF document or feel free to contact us.
basic information
【Other Features】 - Reduction of system costs due to a switching frequency that is 2 to 3 times higher - Reduction of operational costs due to high efficiency - Inverter design tailored to application requirements is possible with the use of three types of topologies - Increased longevity and long-term stability of the inverter system - High power density - High robustness against parasitic turn-on - Ready for immediate use in applications requiring short-circuit resistance *For more details, please refer to the PDF document or feel free to contact us.
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Applications/Examples of results
【Applications】 ■Solar power generation ■UPS (Uninterruptible Power Supply) ■Energy storage ■EV charging ■Medical *For more details, please refer to the PDF document or feel free to contact us.
