MOS-FET Use Reverse Current Prevention Module RP Series
Can be used as an alternative module for diode modules in power redundancy operation and high current diode applications.
TDK-Lambda Reverse Current Prevention Module RP Series This is a diode module that uses a low on-resistance N-channel MOS-FET. It monitors the input and output voltages internally, controlling the MOS-FET to turn on when the input voltage is higher than the output voltage, and to turn off when the input voltage is lower than the output voltage. =Features= ■ Can be used as a redundant diode necessary for parallel redundant operation of power supplies ■ Ideal for reverse current prevention circuits that prevent current from flowing back from the battery when the power is off ■ Low loss: By using a MOS-FET, it significantly reduces 1) Heat generation within the enclosure 2) Output voltage drop =Applications= ■ Battery charging ■ Redundant operation of power supplies *For more details, please feel free to contact us.
basic information
Backflow Prevention Module RP Series =Specifications= (RP-60-20) Input Voltage Range: 7~60VDC Maximum Input Current: 20A Static Reverse Current: 50uA Max. Internal Loss: 4W Max. Parallel Operation: Possible (up to 2 units) *No current balancing function Cooling Method: Natural Air Cooling Size (WxHxD mm): 50x26x77.5
Price range
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Model number/Brand name
TDK-Lambda RP Series
Applications/Examples of results
Backflow Prevention Module RP Series - Computer Systems - Servers - Solar Power Generation Systems - Telecom Infrastructure - Measurement - FA (Factory Automation) - Semiconductors - Charging
