Module "F3L11MR12W2M1_B74"
Equipped with CoolSiC trench MOSFET technology! Achieving excellent gate oxide reliability.
The "F3L11MR12W2M1_B74" uses high-current silicon diodes and is a module suitable for energy storage systems, supporting the full range of cosφ. When connected in parallel, it can achieve 150kW of power in solar systems and 75kW per module in storage systems. Additionally, it features class-leading CoolSiC trench MOSFET technology, ensuring excellent gate oxide reliability. 【Features】 ■ CoolSiC trench MOSFET technology ■ 3-level ANPC topology ■ Full functionality with 1200V switches for DC1500V ■ Increased rated current for Si diodes ■ PressFIT technology *For more details, please refer to the PDF document or feel free to contact us.
basic information
**Main Advantages** ■ Excellent reliability of gate oxide film ■ Short and clean rectification loop ■ Compatible with the entire range of cosφ, suitable for energy storage systems ■ Easy design integration ■ High design flexibility for inverters ■ Output of 150kW in solar applications with two modules connected in parallel ■ Output of 75kW per module for energy storage systems *For more details, please refer to the PDF document or feel free to contact us.*
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Applications/Examples of results
【Target Applications】 ■Energy Storage Systems ■Solar Energy Systems *For more details, please refer to the PDF document or feel free to contact us.