Ultra-compact single-frequency semiconductor laser "I.P.S"
I.P.S technology is applied to next-generation semiconductor lasers.
The ultra-compact single-frequency semiconductor laser "I.P.S" achieves unprecedented stability in emission wavelength width and minimizes wavelength drift due to temperature changes through its ultra-compact hybrid external cavity structure. 【Features】 ○ Selectable spatial output and fiber output ○ The ultra-compact hybrid external cavity laser (HECL) technology has opened up numerous possibilities for semiconductor lasers ○ Various packages are available to suit the applications of narrow-band semiconductor lasers For more details, please contact us or download the catalog.
basic information
【Lineup】 ○ 638nm, 633nm single-frequency laser → A semiconductor laser that combines ultra-compact size, high output, and low power consumption. ○ Stabilized He-Ne gas laser; ideal for replacing He-Ne gas lasers. ○ High output 785nm laser → A high output 785nm laser, optimal for laser cooling and Raman spectroscopy. ○ 785nm integrated Raman probe → Equipped with a 785nm, 100mW laser, optical system, and Raman filter, it allows for Raman signal acquisition simply by connecting a 200μm core fiber to a spectrometer. ● For more details, please contact us or download the catalog.
Price information
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Applications/Examples of results
For more details, please contact us or download the catalog.
