<Interface> ■Standard tools for structural input and result display ■Can be written in a proprietary scripting language and executed from GUI or command line ■Program control via batch files and scripting languages is possible <Material Macro> ■Compounds (InGaAsNSb, AlGaAsSb, InAs, InAlAs, InP, InGaAlAs, etc.) ■Nitrides (GaN, InGaN, AlGaN, c-GaN (hexagonal), c-AlN (hexagonal), etc.) ■Silicon (poly, SiGe, h-SiC (hexagonal), a-Si (amorphous), SiO2, etc.) ■Metals (metal (general-purpose), ITO, Cu, Ag, Fe, Zn, Cd, Al, Sn, Pb, etc.) ■Insulators (air, vacuum, TiO2, AlAs-oxide, sapphire, etc.) ■Organics (BPhen, BCzVBi doped CBP, CuPc, LiF, etc.) ■Others (GaP, CdS, ZnTe, ZnSe, ZnS, etc.)

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APSYS

<Applicable Devices and Models> ■ Silicon (Diodes, JFET, NPN Bipolar, TFT) ■ CCD, CIS ■ FDTD (2D/3D Lens, Optical Detectors) ■ HBT ■ HEMT, FET ■ LED (GaN MQW, QDot, OLED, RCLED) ■ Mixed simulation of devices and circuits ■ NAND Flash Memory ■ Nanowires ■ NEGF (FINFET, HEMT, nanowire, NMOS) ■ QWIP ■ MESFET ■ RTD ■ Schottky Tunneling ■ Photonic Crystals ■ Optical Detectors ■ Solar Cells ■ Tunnel Junctions ■ Type II Quantum Well Photodetectors etc. <Analysis and Plotting> ■ Spatial distribution of physical quantities (Potential, Carrier Density, Current Distribution, Band Diagrams, Optical Mode Distribution, Temperature Distribution, Wave Functions of Multi-Quantum Wells, etc.) ■ Bias Dependence (L-I Characteristics, I-V Characteristics, Current and Gain, Current and Refractive Index Changes, etc.) ■ Spectrum (Mode Gain, Spontaneous Emission, Refractive Index Changes, etc.) ■ AC Analysis (Frequency Characteristics, Response Output, etc.)