Semiconductor Process & Device Simulator "NovaTCAD"
Crosslight's TCAD, which integrates 2D/3D process simulators and device simulators. Free trial available!
<Main Features> ■ General-purpose 2D/3D finite element analysis and design software for semiconductor devices "APSYS" ■ "CSUPREM," a version of SUPREM developed by Stanford University, uniquely enhanced by Crosslight ■ Mask editing tool (GDSII compatible) ■ Input and editing tool for device cross-sectional structures ■ Graphical display of simulation results <Diverse Physical Models and Functions for Device Simulation> ■ Current-voltage (I-V) characteristics ■ Two-dimensional distribution of potential, electric field, and current ■ Two-dimensional distribution of hot carrier temperature in fluid dynamics models ■ Two-dimensional distribution of lattice temperature used in thermal transport models ■ Band diagrams under various bias conditions ■ Results of AC small-signal response analysis at arbitrary frequency ranges ■ Subbands of quantum wells using a heavy-hole mixing model ■ Two-dimensional distribution of impurity occupancy and density trapped at deep levels in semiconductors ■ Two-dimensional optical field distribution of optical devices such as photodetectors ■ Current dependence of the self-emission spectrum of LEDs ■ For other features and details, please download the catalog or contact us. ■ To apply for a trial version, please use the "Trial Version Application Form."
basic information
<Interface> ■Process simulation and device simulation can be controlled through a GUI (mask data editing functions, physical model and bias settings, result analysis and display functions, automatic processing, etc.) <Material Macro (APSYS)> ■Compounds (InGaAsNSb, AlGaAsSb, InAs, InAlAs, InP, InGaAlAs, etc.) ■Nitrides (GaN, InGaN, AlGaN, c-GaN (hexagonal), c-AlN (hexagonal), etc.) ■Silicon (poly, SiGe, h-SiC (hexagonal), a-Si (amorphous), SiO2, etc.) ■Metals (metal (general-purpose), ITO, Cu, Ag, Fe, Zn, Cd, Al, Sn, Pb, etc.) ■Insulators (air, vacuum, TiO2, AlAs-oxide, sapphire, etc.) ■Organics (BPhen, BCzVBi doped CBP, CuPc, LiF, etc.) ■Others (GaP, CdS, ZnTe, ZnSe, ZnS, etc.)
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Applications/Examples of results
<Applicable Devices and Models> ■LDMOS ■LIGBT ■Silicon (Diodes, JFET, NPN Bipolar, TFT) ■CCD, CIS ■FDTD (2D/3D Lens, Optical Detectors) ■HBT ■HEMT, FET ■LED (GaN MQW, QDot, OLED, RCLED) ■Mixed Device and Circuit Simulation ■NAND Flash Memory ■NEGF (FINFET, HEMT, Nanowire, NMOS) ■QWIP ■MESFET ■RTD ■Schottky Tunneling ■Photonic Crystals ■Optical Detectors ■Solar Cells ■Tunnel Junctions ■Type II Quantum Well Optical Detectors etc. <Analysis and Plotting> ■Spatial Distribution of Physical Quantities (Potential, Carrier Density, Current Distribution, Band Diagrams, Optical Mode Distribution, Temperature Distribution, Wave Functions of Multi-Quantum Wells, etc.) ■Bias Dependence (L-I Characteristics, I-V Characteristics, Current and Gain, Current and Refractive Index Change, etc.) ■Spectra (Mode Gain, Spontaneous Emission, Refractive Index Change, etc.) ■AC Analysis (Frequency Characteristics, Transient Analysis, etc.)
