CZ wafer film deposition processing

Film deposition is possible on wafers ranging from 2 inches to 12 inches.

Enatec Co., Ltd.'s CZ wafer film deposition processing can accommodate film deposition on wafers ranging from 2 inches to 450 mm, depending on the type of film. Oxide films: thermal oxidation, RTO, LP-TEOS, HDP-USG, P-TEOS, PSG, BPSG, BSG, LP-CVD, PE-CVD Nitride films: HCD-SiN, DCS-SiN, P-SiN, LP-SiN, LP-CVD, PE-CVD Metal films: TaN, Ta, Cu, Al, AlN, Al-Si, Al-Si-Cu, Ni, W, W-Si-Cu Others: Poly-Si, a-Si, SiC, Low-k (SiOC-based, organic chemistry-based), graphene films, graphite * Depending on the type of film, such as SiO2, SiN, SiON, we can accommodate from one piece. * We can also handle Ti, Cu, Cr, Ni, etc., through sputter deposition. * Resist coating/exposure/etching can be accommodated from 4 inches to 12 inches. * We can also provide consistent support for wafers with test patterns (from 6 inches to 12 inches) based on specifications. * We accept exposure/etching with provided reticles (8 inches and 12 inches). For more details, please contact us.

basic information

【Features】 ○ Film deposition is possible on wafers ranging from 2 inches to 450 mm, depending on the film type. ○ Supports wafers with test patterns (6 inches to 12 inches). ○ Exposure/etching is also supported with provided reticles (8 inches and 12 inches). ○ Resist coating/exposure/etching can be accommodated for sizes from 4 inches to 12 inches. ○ Back grinder: diameter from 5 inches to 12 inches. ○ Dicing: diameter from 5 inches to 12 inches. 【Compatible Film Types for 12 Inches】 ○ Oxide films: thermal oxide, RTO, LP-TEOS, HDP-USG, P-TEOS, PSG, BPSG. ○ Nitride films: DCS-SiN, P-SiN, LP-SiN. ○ Metal films: TaN, Ta, Cu, Al, Al-Si, Al-Si-Cu, Ni, W, W-Si-Cu. ○ Others: Poly-Si, A-Si, SiC, Low-k (SiOC-based, organic chemistry-based). ● For more details, please contact us.