FZ wafer, FZ silicon products, gas-doped FZ silicon

We can provide high-quality, high-purity, high-resistance FZ silicon manufactured using the FZ method with low levels of pollutants.

Gas-doped FZ silicon is FZ silicon that has been doped with impurities by pulling a single crystal in a dopant gas. Our company can provide high-quality, high-purity FZ silicon. Currently, due to its low level of contaminants, FZ silicon is widely used not only in existing memory and DSP ICs but also in the fields of MEMS and optoelectronic sensors. Please contact us for more details. ★Prime Grade FZ ingot (available for immediate delivery) A manufacturer's Certificate of Compliance (CofC) will be provided upon delivery. Specifications: Orientation: (1-1-1) ± 2 deg. Diameter (mm): 101.60 ± 0.20 Length (mm): 200 - 400 First Orientation Flat (mm): 30.5 - 34.5 (1-10) +/- 1 Deg. Second Orientation Flat (mm): N.A. Type: N-type/Phosphorus Lifetime (microsec): 1000 Resistivity (ohm cm) at 25°C: 2032.00 Resistivity Tolerance (ohm cm): ±700.00 RRV [%]: N.A.

basic information

**Main Specifications** This is gas-doped FZ silicon. - Diameter: 50mm, 75mm, 100mm, 125mm, 150mm, 200mm - Resistance can range from a few ohms to several thousand ohms - Crystal orientation: <100> or <111> (depending on diameter) - Conductivity type (dopant): P (Boron) or N (Phosphorus) - Resistivity tolerance: Varies depending on resistivity - In-plane resistivity distribution: Varies depending on resistivity - Carrier lifetime: Varies depending on resistivity - Oxygen and carbon concentration: Approximately <2.0 × 10(16) atoms/cm3 Available in small lots starting from 25 pieces or depending on stock availability. For more details, please contact us.