Compatible with diameters from approximately 30 mm to 8 inches, high-resistance FZ wafers.

We can accommodate high resistance over 10,000 ohms, with diameters ranging from approximately 30 mm to 8 inches, and we also offer thinning and chip processing arrangements!

The diameter ranges from approximately 30 mm to 8 inches, featuring high lifetime, low oxygen, and low carbon, with the capability to accommodate ultra-high resistance wafers exceeding 10,000 Ω. FZ wafers for sensors are used in particle inspection machines and IR inspection machines, while FZ wafers for high-power devices are used in thyristors and IGBTs, and FZ wafers for medium voltage are utilized in IGBTs and diodes. *Prime Grade FZ ingots (available for immediate delivery) A Certificate of Conformance (CofC) with actual measurement values will be provided upon delivery. Processing into wafers is also possible. Specifications: Finish: as ground Orientation: (1-1-1) ± 2 deg. Diameter (mm): 101.60 ± 0.20 Ingot length (mm): 200 - 400 First OF (mm): 30.5 - 34.5 (1-10) +/- 1 Deg. Second OF (mm): N.A. Type: N-type Lifetime (microsec): 1000 Resistance value (ohm cm) at 25°C: 2032 ± 700.00 RRV [%]: N.A. *Multiple pieces are in stock.

basic information

【Features】 ○ Compatible with diameters of approximately 30mm to 8 inches ○ Capable of handling a wide range of resistances from around 10 ohms to over 10,000 ohms ○ High lifetime, low oxygen, low carbon ○ Compatible with infrared windows, filters, lenses, etc. ○ Used in applications such as solar cells due to resistance bands. [High Resistance FZ Wafer for Sensors] ○ Usable in particle inspection machines, IR inspection machines, etc. ○ Capable of achieving high resistances exceeding several thousand to 10,000 ohms. ○ Manufactured using the FZ method, characterized by high lifetime with few impurities. [FZ Wafer for High Power Devices] ○ Usable in thyristors, IGBTs (over 1200V), etc. ○ Low variation in resistance ○ Neutron irradiation is performed, resulting in very low resistance variation. [FZ Wafer for Medium Voltage] ○ Usable in IGBTs (over 600V), diodes, etc. ○ Manufactured using gas doping. [FZ Wafer for High Voltage] ○ Neutron-treated silicon wafers used in high voltage IGBTs. ○ Characterized by low resistance variation. ● For more details, please contact us.