Compatible with 3-inch, 4-inch, and 6-inch "SOS wafers."
We can introduce SOS wafers (silicon-on-sapphire wafers) with diameters of 3 inches, 4 inches, and 6 inches.
SOS wafers are wafers on which silicon is epitaxially grown on the R-plane of sapphire substrates. They are used in various devices such as pressure sensors and are characterized by their high resistance to radiation. We can offer SOS wafers in sizes of 3 inches (76mm), 4 inches (100mm), and 6 inches (150mm). Depending on the specifications, we may also be able to accommodate 8-inch wafers, so please feel free to inquire. The dopant for the epitaxial layer is Phosphorous for N-type and Boron for P-type. We can accommodate small quantities as well.
basic information
The standard main specifications are as follows: Diameter: 150 mm Epitaxial thickness: 0.3 um +/- 10% In-plane uniformity um (%): 0.05 um (16.7%) Epitaxial resistivity: >30 ohm cm UVR: <1.0 Diameter: 100 mm Epitaxial thickness: 0.3 um +/- 10% In-plane uniformity um (%): 0.05 um (16.7%) Epitaxial resistivity: >30, 5-30, 2.5-10 ohm cm UVR: <1.0 Diameter: 100 mm Epitaxial thickness: 0.6 um +/- 10% In-plane uniformity um (%): 0.09 um (15%) Epitaxial resistivity: >30, 5-30, 2.5-10 ohm cm UVR: <0.75 The main specifications are as above, but please contact us if you have specific requirements.
Price information
It varies depending on the diameter, specifications, and quantity, so please contact us.
Delivery Time
Applications/Examples of results
It is used in various devices such as pressure sensors.
