Fujitsu Semiconductor Memory Solutions, Inc. would like to inform you that starting in May 2022, we have changed the name of the ferroelectric memory we provide from "FRAM" to "FeRAM." 1. Background of the Name Change The Fujitsu Group has been launching a company-wide DX project since July 2020, working on various transformations from corporate culture to business processes. At our company, we are not only reforming and streamlining our operations but also working to change the information we communicate to our customers into clearer expressions. As part of this effort, we have decided to change the name of our ferroelectric memory products from "FRAM" to the general term "FeRAM." 2. Timing of the Change Starting from May 2022, we are gradually changing the representations on our publicly available websites and documents. We apologize for any confusion this may cause due to the coexistence of the old and new names during this transition period, and we appreciate your understanding. We will continue to develop and provide memory products that enhance the value of our customers' products.

We have published a more detailed introduction to the applications of Fujitsu Semiconductor's non-volatile memory "FeRAM."

Optimal for industrial machinery requiring reliable operation in extremely cold environments. Fujitsu Semiconductor Limited has developed the 64K-bit FeRAM "MB85RS64TU," which guarantees operation in extremely low temperature environments of -55°C, and is offering mass-produced products. This product features a wide operating voltage range of 1.8V to 3.6V and is a non-volatile memory capable of lower temperature operation than competing memories. It guarantees 10 trillion data rewrite cycles even at -55°C, making it particularly suitable for industrial machinery such as field devices used in the extraction of natural gas and oil in extremely cold regions. This FeRAM can also be utilized in general industrial fields such as measurement instruments, flow meters, and robots. <Main Specifications> Product Name: MB85RS64TU Capacity (Memory Configuration): 64K bits (8K x 8 bits) Interface: SPI (Serial Peripheral Interface) Operating Frequency: Up to 10MHz Operating Supply Voltage: 1.8V to 3.6V Operating Temperature Range: -55°C to +85°C Write/Read Guarantee Cycles: 10 trillion (10^13 cycles) Package: 8-pin SOP, 8-pin SON

Non-volatile memory optimized for advanced automotive markets such as ADAS Fujitsu Semiconductor Memory Solutions Co., Ltd. has added the 2M-bit FeRAM "MB85RS2MLY," which operates at a low voltage of 1.8V, to its lineup of FeRAM family that operates at 125°C. This product is a memory with an SPI interface that operates at a low supply voltage of 1.7V to 1.95V. Evaluation samples are currently available, and mass production is scheduled to begin in June. This new product is ideal for electronic control units that require low voltage operation in advanced automotive markets such as advanced driver-assistance systems (ADAS). ■ Main Specifications Product Name: MB85RS2MLY Capacity (Memory Configuration): 2M bits (256K x 8 bits) Interface: SPI (Serial Peripheral Interface) Operating Frequency: 50MHz (maximum) Operating Supply Voltage: 1.7V to 1.95V Operating Temperature Range: -40°C to +125°C Write/Read Endurance: 10 trillion cycles (10^13 cycles) Package: 8-pin SOP, 8-pin DFN Quality Standards: AEC-Q100 Grade 1 compliant

Fujitsu Semiconductor Limited has developed the 8M-bit FeRAM "MB85R8M2T," which is the largest memory capacity in its FeRAM product lineup, and has started providing mass-produced units this month. This product operates in a wide range of 1.8V to 3.6V and features a non-volatile memory with an SRAM-compatible parallel interface. It meets the demands for increased memory capacity beyond the previous maximum of 4M bits FRAM and reduces the need for batteries used for power interruption measures in already deployed 8M-bit SRAM. By replacing SRAM used in industrial machinery applications such as control devices, robots, and machine tools with this FeRAM, it eliminates the need for batteries, reduces the mounting area of the memory section by approximately 90%, and contributes to overall cost reduction.

～ Memory optimal for real-time data rewriting such as location information from drive recorders ～ Fujitsu Semiconductor Limited has developed the 4M-bit FeRAM "MB85RS4MT," which has the largest memory capacity for serial interfaces, and has started providing mass-produced units this month. The MB85RS4MT was developed in response to customer demands for "increased rewrite cycles," "shorter rewrite times," and "increased memory capacity" due to changes in the environment caused by the expansion of edge computing and the increasing amount of sensor data. This FeRAM is ideal for all applications that require frequent real-time data logging, such as drive recorders, operation recorders, robots, machine tools, measuring instruments, meters, and consumer devices.

Optimized for automotive and industrial machinery using 5V operating temperature sensors We have developed the "MB85RS64VY," a 64K-bit FeRAM product with an SPI interface, as the first product in our FeRAM family guaranteed to operate at 125°C with a power supply voltage of 5V. Evaluation samples are currently available, and mass production is scheduled for the first quarter of 2019. FeRAM features high-speed writing, high rewrite endurance, and low power consumption, making it a highly compatible alternative to EEPROM that is adopted by many customers. The product we developed is ideal for automotive electrical components and industrial machinery that use 5V operating electronic components such as temperature sensors.

We have developed the 2M-bit FeRAM "MB85RS2MTY," which has the largest memory capacity in our FRAM family guaranteed to operate at 125°C, and we have begun providing evaluation samples. This product is a non-volatile memory that guarantees 10 trillion data write cycles even in high-temperature environments of 125°C. It allows for continuous recording of real-time driving data or position data, and data is not lost even during power outages. Therefore, it is ideal for automobiles and industrial robots that become hot due to heat generated by engines or motors. ■ Main Specifications Product Name: MB85RS2MTY Capacity (Memory Configuration): 2M bits (256K x 8 bits) Interface: SPI (Serial Peripheral Interface) Operating Frequency: 50MHz (maximum) Operating Supply Voltage: 1.8V to 3.6V Operating Temperature Range: -40°C to +125°C Guaranteed Write/Read Cycles: 10 trillion (10^13 cycles) Package: 8-pin SOP, 8-pin DFN Quality Standards: AEC-Q100 Grade 1 compliant

■Non-volatile memory for automotive and industrial machinery that guarantees reliability in high-temperature environments The “MB85RS4MTY” is a non-volatile memory with a doubled memory capacity of 4M bits and operates with an SPI interface at a wide power supply voltage range of 1.8V to 3.6V. Even in high-temperature environments of 125℃, the operating current is kept to a maximum of 4mA (at 50MHz operation), and the power-down current is a maximum of 30µA, contributing to low power consumption for environmentally conscious systems. ■Main Specifications - Product Name: MB85RS4MTY - Capacity (Memory Configuration): 4M bits (512K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: 50MHz (maximum) - Operating Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +125℃ - Write/Read Endurance: 10 trillion cycles - Package: 8-pin DFN, 8-pin SOP

Fujitsu Semiconductor Memory Solution Limited has started mass production of the 125°C operating 4M-bit FeRAM "MB85RS4MTY" from this month. This product complies with the high-quality standard AEC-Q100 Grade 1, known as automotive grade, and is suitable for advanced driver assistance systems (ADAS) and high-performance industrial robots that require high reliability.

A New Form of Electronic Paper with Battery-less Solutions Fujitsu Semiconductor Limited, in collaboration with E Ink Holdings Inc., has developed a technology that enables the rewriting of electronic paper displays without batteries through UHF band wireless power transmission. Unlike NFC, which requires close proximity for communication, this UHF band technology significantly improves the communication distance during data rewriting, paving the way for the creation of new applications that combine electronic paper with UHF band RFID.

With the industry's smallest class of read current, it is optimal for hearing aids, smartwatches, and more. Fujitsu Semiconductor Limited will start offering the world's largest capacity 8M-bit ReRAM, "MB85AS8MT," from September as a mass-produced product. This product is a ReRAM developed in collaboration with Panasonic Semiconductor Solutions Co., Ltd. The MB85AS8MT operates with a wide range of supply voltages from 1.6V to 3.6V and is a non-volatile memory with an SPI interface that operates with EEPROM-compatible commands and timing. A significant feature of this product is its very low average read current of 0.15mA at 5MHz operation. Therefore, in battery-operated applications where data read operations are frequent, it can minimize battery consumption. It is also available in an ultra-compact WL-CSP (Wafer Level Chip Size Package), making it an ideal memory for small wearable devices such as hearing aids, smartwatches, and smart bands.