System memory
Trust and Achievement ~High Quality, High Reliability Memory~
Our company has been providing high-quality, high-performance memory LSI that is essential for high-function electronic devices for many years. In recent years, we have been offering memory products that are smaller, higher-performing, and lower in power consumption, as well as proposing optimal solutions that combine memory.
basic information
Our company's system memory ■FeRAM (Ferroelectric RAM) https://www.fujitsu.com/jp/group/fsm/products/FeRAM/ ■ReRAM (Resistive Random Access Memory) https://www.fujitsu.com/jp/group/fsm/products/reram/ ■NRAM http://www.fujitsu.com/jp/group/fsl/resources/news/press-releases/2016/0831.html
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Applications/Examples of results
For information on the use of system memory, please watch the product introduction video.
Detailed information
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Non-volatile memory FeRAM (Ferroelectric RAM) has features such as high-speed writing, high rewrite cycles, and low power consumption compared to conventional non-volatile memories like EEPROM and flash memory. Applications include card fields, industrial sectors, medical, wearable devices, robots, drones, and more.
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Non-volatile memory ReRAM (Resistive Random Access Memory) changes resistance by applying voltage to a metal oxide film, recording data as "0" and "1" based on the difference between high resistance and low resistance states. The read current is among the lowest in the industry. Furthermore, the read endurance is unlimited, making it ideal for read-intensive applications.
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Non-volatile memory NRAM using carbon nanotubes We are advancing the development of non-volatile memory "NRAM" with the aim of achieving thousands of times the rewrite endurance and rewrite speed compared to embedded Flash memory, and ultimately replacing DRAM with non-volatile memory in the future.
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News about this product（5）
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Developed a 2M-bit FeRAM that guarantees operation at 125℃ with a power supply voltage of 1.8V.
Non-volatile memory optimized for advanced automotive markets such as ADAS Fujitsu Semiconductor Memory Solutions Co., Ltd. has added the 2M-bit FeRAM "MB85RS2MLY," which operates at a low voltage of 1.8V, to its lineup of FeRAM family that operates at 125°C. This product is a memory with an SPI interface that operates at a low supply voltage of 1.7V to 1.95V. Evaluation samples are currently available, and mass production is scheduled to begin in June. This new product is ideal for electronic control units that require low voltage operation in advanced automotive markets such as advanced driver-assistance systems (ADAS). ■ Main Specifications Product Name: MB85RS2MLY Capacity (Memory Configuration): 2M bits (256K x 8 bits) Interface: SPI (Serial Peripheral Interface) Operating Frequency: 50MHz (maximum) Operating Supply Voltage: 1.7V to 1.95V Operating Temperature Range: -40°C to +125°C Write/Read Endurance: 10 trillion cycles (10^13 cycles) Package: 8-pin SOP, 8-pin DFN Quality Standards: AEC-Q100 Grade 1 compliant
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Developed an 8M-bit product, the maximum memory capacity for non-volatile memory FeRAM.
Fujitsu Semiconductor Limited has developed the 8M-bit FeRAM "MB85R8M2T," which is the largest memory capacity in its FeRAM product lineup, and has started providing mass-produced units this month. This product operates in a wide range of 1.8V to 3.6V and features a non-volatile memory with an SRAM-compatible parallel interface. It meets the demands for increased memory capacity beyond the previous maximum of 4M bits FRAM and reduces the need for batteries used for power interruption measures in already deployed 8M-bit SRAM. By replacing SRAM used in industrial machinery applications such as control devices, robots, and machine tools with this FeRAM, it eliminates the need for batteries, reduces the mounting area of the memory section by approximately 90%, and contributes to overall cost reduction.
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Developed a 4M-bit product, which is the maximum memory capacity for FeRAM operating at 125℃.
■Non-volatile memory for automotive and industrial machinery that guarantees reliability in high-temperature environments The “MB85RS4MTY” is a non-volatile memory with a doubled memory capacity of 4M bits and operates with an SPI interface at a wide power supply voltage range of 1.8V to 3.6V. Even in high-temperature environments of 125℃, the operating current is kept to a maximum of 4mA (at 50MHz operation), and the power-down current is a maximum of 30µA, contributing to low power consumption for environmentally conscious systems. ■Main Specifications - Product Name: MB85RS4MTY - Capacity (Memory Configuration): 4M bits (512K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: 50MHz (maximum) - Operating Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +125℃ - Write/Read Endurance: 10 trillion cycles - Package: 8-pin DFN, 8-pin SOP
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Renewal of the FeRAM and ReRAM product website.
Fujitsu Semiconductor Memory Solutions has renewed its website for FeRAM and ReRAM products.
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The memory product catalog has been updated to the latest version (2021 edition).
Fujitsu Semiconductor Memory Solutions has updated its memory product catalog to the latest version (2021 edition).
