4M-bit FeRAM 'MB85RS4MTY' *4 documents are currently being distributed.

Capable of up to 10 trillion data rewrites even in high-temperature environments of up to 125°C. Suitable non-volatile memory for automotive and industrial machinery applications.

"FeRAM" is a non-volatile memory that uses ferroelectric elements. It offers advantages such as high rewrite endurance, fast writing speed, and low power consumption. In particular, the "MB85RS4MTY" is a 4M-bit FeRAM developed to meet the growing demand for larger capacities, building on the 2M-bit FeRAM "MB85RS2MTY." Even in high-temperature environments of 125°C, it can handle up to 10 trillion data write cycles, making it suitable for automotive applications such as advanced driver-assistance systems (ADAS) and industrial robots. 【Features】 ■ Operates with a wide power supply voltage range of 1.8 to 3.6V ■ Adopts SPI interface ■ Even in high-temperature environments, the operating current is a maximum of 4mA (at 50MHz operation), and the power-down current is a maximum of 30μA, ensuring low power consumption. *We are currently offering materials that introduce detailed features and application examples of "FeRAM." You can view them via "PDF download." Please feel free to contact us for inquiries.

basic information

【About FeRAM】 It is a non-volatile memory that retains data even when the power is turned off, while also possessing the advantages of volatile memory, such as high rewrite endurance and fast writing speeds. The structure of storing data in a ferroelectric material allows for a maximum of 10 trillion data rewrite cycles. Additionally, due to the short writing time, it consumes less power, and no current is needed for data retention. Replacing EEPROM and SRAM is expected to solve various challenges. *For more details, please refer to the materials. Feel free to contact us as well.