RAMXEED (旧:富士通セミコンダクターメモリソリューション株式会社 2025/1/1に社名変更しました) Official site

1M-bit FeRAM "MB85RS1MT"

Low-power non-volatile memory that enables the miniaturization and thinness of wearable devices.

The MB85RS1MT is a compact size of 3.09 x 2.28 x 0.33mm. When comparing the implementation area of both, the WL-CSP corresponds to about 23% of the SOP, allowing for a reduction of approximately 77% in implementation area. Furthermore, this compact package achieves a thickness of 0.33mm, which is about half that of a credit card, enabling a volume reduction of about 95% compared to SOP in terms of implementation volume. By introducing this FeRAM into wearable devices that frequently record real-time log data, it is possible to extend or miniaturize battery life. ■ Main Specifications - Product Name: MB85RS1MT - Memory Capacity (Configuration): 1M bits (128K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Supply Voltage: 1.8V to 3.6V - Write/Read Endurance: 10 trillion cycles - Data Retention Characteristics: 10 years (+85°C) - Package: 8-pin WL-CSP, 8-pin SOP

Related Link - https://www.fujitsu.com/jp/group/fsm/documents/pro…

basic information

The 8-pin wafer-level chip-size package (hereinafter referred to as WL-CSP) of the 1M-bit FeRAM product "MB85RS1MT" has a footprint that is approximately 23% smaller and a thickness that is about one-fifth compared to the conventional 8-pin SOP package (hereinafter referred to as SOP), making it one of the smallest in the industry for a 1M-bit FeRAM with an SPI interface. The FeRAM in the WL-CSP is optimal memory for wearable devices. It contributes to the miniaturization and thinness of the application body size, and the extremely low power consumption during writing helps extend battery life.

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Model number/Brand name

MB85RS1MT

Applications/Examples of results

■Optimal Memory for Wearable Devices One of the features of FeRAM is its "low power consumption." Compared to general-purpose EEPROM, which is also a non-volatile memory, the writing time for data is shorter, significantly reducing the power consumption during writing. Therefore, by introducing this FeRAM into wearable devices where real-time logging and data recording occur frequently, it becomes possible to extend battery life or reduce size.

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