4M-bit FeRAM "MB85R4M2T"
Non-volatile memory that can replace SRAM, enabling battery-less solutions for industrial machinery and business equipment.
This product is a non-volatile memory that retains data even when the power is turned off. It is offered in a 44-pin TSOP package compatible with general-purpose SRAM, allowing for the replacement of SRAM with this FeRAM in industrial machinery, business equipment, and medical devices without significantly altering the design of the circuit board. This eliminates the need for a battery for data retention, contributing to a reduction in the mounting area of the final product's circuit board, power savings, and overall cost reduction. ■ Main Specifications - Capacity (Configuration): 4M bits (256K × 16 bits) - Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +85℃ - Write/Read Endurance: 10 trillion cycles (10^13 cycles) - Data Retention Characteristics: 10 years (+85℃) - Access Time Address Access Time: 150ns (Min) /CE Access Time: 75ns (Max) - Operating Current Operating Supply Current: 20mA (Max) Standby Current: 150µA (Max) Sleep Current: 20µA (Max) - Package: 44-pin TSOP
basic information
This product adopts a 44-pin TSOP package compatible with general-purpose SRAM, allowing applications that use SRAM requiring high-speed access for data recording, such as industrial machinery, business equipment, and medical devices, to replace SRAM with this product without significantly altering the circuit board design. Furthermore, since a battery for data retention is not required, it contributes to reducing the circuit board mounting area of the final product, lowering power consumption, and reducing total costs.
Price range
Delivery Time
Model number/Brand name
MB85R4M2T
Applications/Examples of results
By adopting a 44-pin TSOP package compatible with general-purpose SRAM, it is possible to replace SRAM with this product in applications that require high-speed access for data recording, such as industrial machinery, business equipment, and medical devices, without significantly altering the board design.
Detailed information
-
Reduction of implementation area By replacing SRAM with this FeRAM in devices that were recording data using batteries, the battery for data retention becomes unnecessary. This makes it possible to reduce the implementation area of the memory section by more than 50%.
-
Reduction of Power Consumption (Energy Saving) In systems using SRAM, a data retention current continuously flows to maintain the memory data even when the main power supply of the device is turned off. Therefore, a power consumption of approximately 15μW occurs per hour, but in non-volatile memory FeRAM, this power consumption becomes zero.
-
Reduction of Total Cost By replacing with FeRAM, we contribute to the reduction of total costs, including development and operation of the memory section. During development, we can reduce component costs by eliminating the battery. Furthermore, assuming the equipment is used for several years, the operational costs associated with regular battery replacements, securing battery inventory, inspections, and other maintenance that were required when using SRAM will also be unnecessary. Therefore, this battery-less solution can contribute to the reduction of total costs, combining both development and operational costs.
