4M-bit FeRAM "MB85RS4MT"
4M-bit FeRAM "MB85RS4MT" suitable for real-time data rewriting such as location information from a drive recorder.
This product is a memory developed in response to the demands from customers using existing EEPROMs due to changes in the environment, such as the expansion of edge computing and the increase in the amount of sensor data. Customers have expressed the desire to "increase the number of rewrite cycles," "reduce rewrite time," and "increase memory capacity." This product is well-suited for various applications that require frequent real-time data logging, such as drive recorders, operation recorders, robots, machine tools, measuring instruments, meters, and consumer devices. ■ Main Specifications - Product Name: MB85RS4MT - Capacity (Memory Configuration): 4M bits (512K x 8 bits) - Interface: SPI (Serial Peripheral Interface) - Operating Frequency: Up to 40MHz - Operating Power Supply Voltage: 1.8V to 3.6V - Operating Temperature Range: -40℃ to +85℃ - Write/Read Guarantee Cycles: 10 trillion cycles - Package: 8-pin SOP
basic information
The operating voltage of this product has a wide range from 1.8V to 3.6V, allowing the electronic components around the memory integrated in the customer's product to support either 1.8V or 3.6V operation. The operating current is a maximum of 250μA at 1MHz operation, and the standby current is very low at a maximum of 50μA, achieving low power consumption. The package is an 8-pin SOP that can replace existing EEPROMs, enabling a switch to this new product without significantly changing the design of the customer's product.
Price range
Delivery Time
Model number/Brand name
MB85RS4MT
Applications/Examples of results
This FeRAM is suitable for various applications that require frequent real-time data logging, such as drive recorders, operation recorders, robots, machine tools, measuring instruments, meters, and consumer devices.
Detailed information
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The rewrite guarantee count of this product is approximately 10 trillion times, which is about 10 million times higher compared to the same non-volatile memory EEPROM, so the rewrite count will not become a design bottleneck. It is suitable as memory for frequently recording sensor information in edge computing.
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In data writing operations, EEPROM and flash memory require not only writing time but also sector erase time, whereas FeRAM achieves high-speed writing by allowing only overwriting without erasure. As a result, even if a voltage drop occurs during data writing, such as a momentary interruption, FeRAM can protect the data being written.
