Ion Beam Delayering Device / Semiconductor Physical Analysis
Semiconductor failure analysis, yield analysis, reverse engineering, microdisplay failure analysis.
It is a cost-effective solution that provides rapid results for layer delamination and removal of materials in semiconductor failure analysis. It achieves excellent uniformity and minimal damage over a wide area. By using multiple ion beam etching techniques, it is possible to match the etching rates of different materials in a single layer, allowing for uniform removal of the entire layer regardless of chemical composition.
basic information
In the microelectronics market, there is a movement towards higher performance and higher density semiconductors, and recent designs have been focusing on reducing layer thickness and compacting the structures within the layers. However, applying traditional processing techniques to such chips is labor-intensive and costly, and it tends to lead to a higher likelihood of errors. Due to the difficulty of mechanical sample preparation, beam-based technologies have emerged for device delay processing applications. Ion Beam Delayering allows for the production of large-area samples and enables an accurate and controlled physical analysis processing process.
Price range
Delivery Time
Model number/Brand name
Infinity FA systems
Applications/Examples of results
Semiconductor failure analysis Yield analysis Reverse engineering Microdisplay failure analysis
