ジェピコ 本社、大阪支店、名古屋支店、練馬支店 Official site

High-resolution, high-performance camera head for space! Used in various products.

For more details, please refer to the related links or feel free to contact us.

Widely adopted in space projects around the world!

■ Radiation-Resistant Memory We offer a variety of memory types for space applications (SRAM, SDRAM, DDR, DDR2, PROM, EEPROM, MRAM, FRAM, FLASH). Each series provides the largest memory capacities available in the market. Additionally, they are equipped with radiation resistance through rigorous screening.

We are explaining about 3D PLUS and ROBUSTA-3A!

<Product Example: FUSIO RT> This is a module that incorporates a programmable Rad Hard By Design (RHBD) SRAM-based FPGA with high-reliability embedded memory, including 128M-bit TMR configuration memory, optional computing memory, and data storage memory, all stacked in a single compact package. FPGA Resources: 263 users I/Os 800 Mbps I/O support 550k ASIC gates equivalent to 4,400,000 system gates Environmental Resistance: TID > 40 krad (Si) SEL LET > 60 MeV.cm²/mg Temperature Range: -40 °C to +105 °C

An explanation of the CASPEX series of high-reliability cameras for space and an overview of 3D PLUS.

- Radiation resistance: Good! 3D stacked structure module - Compact and high density due to layering! - Internally equipped with operational FPGA and memory for data storage! - Numerous achievements from low Earth orbit to deep space, both domestically and internationally! - IP Core proposals are also possible! - Cable assembly proposals! - Lineup includes 4Mpix (black and white/color), 12Mpix (black and white/color), and 1.3Mpix SWIR! - New lens-equipped camera IRIS has been launched!

Ideal for system applications that require performance and high reliability, such as communication satellites and experimental devices!

FPGA Resources: 263 users I/Os 800 Mbps I/O support 550k ASIC gates equivalent to 4,400,000 system gates Environmental Resistance: TID > 40 krad (Si) SEL LET > 60 MeV.cm²/mg Temperature Range: -40 °C to +105 °C etc.

Proven high reliability through renowned projects and various application achievements!

*You can view the detailed content of the article through the related link. For more information, please download the PDF or feel free to contact us.*

Here is a reference translation of the Webinar published by VPT Inc.! The content is quoted from the website.

*You can view the detailed content of the article through the related link. For more information, please download the PDF or feel free to contact us.*

Compatible with 100V/120V bus! Lineup adjustable from 12V to 55V.

【Specifications】 ■ Input range: Compatible with 100V/120V bus ■ Output range: Lineup adjustable from 12V to 55V ■ Operating temperature range: Maximum -35℃ to +85℃ ■ Capacity: 400W ■ Achieves maximum efficiency of 95% by adopting GaN HEMT ■ Built-in EMI filter ■ Capable of parallel operation *For more details, please refer to the related links or feel free to contact us.

Achieving smaller and lighter circuits for important space missions!

【Features of GaN-on-Si】 ■ High breakdown voltage ■ High-speed switching ■ High thermal conductivity ■ Low ON resistance ■ Excellent radiation resistance *For more details, please refer to the related links or feel free to contact us.

Providing GaN-based power discrete devices with radiation resistance performance.

**Features** - A "high power density, high efficiency, compact and lightweight" discrete device specially designed for commercial satellite space environment applications. - Achieves low RDS(on) values due to very high electron mobility and low temperature coefficient. - Adopts a lateral die structure to achieve very low gate charge (QG) and fast switching times. - Dedicated ceramic adapters and driver device evaluation boards are also available. For more details, please contact us.