Black silicon photodiode
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A photodiode with very high sensitivity over a wide wavelength range from 200nm to 950nm.
ElFys' black silicon photodiode is a photodiode that enhances light collection through surface nanostructure technology combined with atomic layer deposition (ALD) coating, allowing for high sensitivity in detecting light over a wide wavelength range. It has an external quantum efficiency of over 96% in the wavelength range of 200nm to 950nm. Particularly in the ultraviolet (UV) region, it exhibits very high sensitivity, with approximately twice the optical responsiveness compared to conventional pn junction photodiodes.
basic information
【Features】 - Ideal light response over a wide wavelength range (200 nm to 950 nm) - Over 96% external quantum efficiency - Capable of collecting light at incident angles of up to 70 degrees 【Technical Information】 - Ultraviolet light response characteristics (twice that of a typical pn junction photodiode) - Detection angle (extremely high absorption rate of >95% at 60°C) - External certification Physikalisch-Technische Bundesanstalt (German National Metrology Institute) MIKES (Finnish National Metrology Institute)
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Applications/Examples of results
- Ultra-sensitive photodiode for wearable health monitoring devices - Light detection (illuminance sensor) - X-ray imaging - Spectral analysis
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We will be exhibiting at SmartSensing 2023.
We will be exhibiting at SmartSensing2023, which will be held from May 31 (Wednesday) to June 2 (Friday), 2023.
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SmartSensing2022
Introducing ultra-small near-infrared spectroscopic sensors that contribute to SDGs, such as plastic sorting and material identification, as well as fiber optic sensors (temperature, strain, acoustic, dynamic pressure sensors) designed for harsh environments and power applications, and gas remote monitoring systems.
