Ion energy measurement device
You can measure ion energy during etching, sputtering, and film deposition processes.
The detection probe can be mounted on the electrode/substrate holder, allowing for plasma optimization under the same conditions as the actual process. Measurements can be taken under various bias conditions (floating, DC, pulsed DC, RF). The following measurements can be performed during the plasma discharge process: - Ion energy distribution - Ion flux - Ion current - Electron flux and energy
basic information
- The detection probe can be attached to the electrode/substrate holder. - Measurements of energy up to 500 eV can be made under pressures of 300 millitorr or less. - Time-resolved measurements of pulse systems up to 500 kHz can be detected with a step resolution of 44 ns. - The detection probe is portable and can be easily attached to multiple chambers. - Measurements can be made under various bias conditions (single, dual, multi frequencies): - Floating - DC - Pulse DC - RF
Price range
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Applications/Examples of results
- Development of plasma processes - Diagnosis of plasma processes - Development tools for etching and CVD - Development of thin film deposition processes using magnetron sputtering and HiPIMS
