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ON Semiconductor collaborates with GlobalFoundries on the development of next-generation GaN power devices.

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ON Semiconductor will expand its leadership in the intelligent power sector by starting the development and manufacturing of next-generation gallium nitride (GaN) power devices at 650V through a new collaboration agreement with GlobalFoundries (GF). ON Semiconductor's products will combine GF's 200mm eMode GaN-on-silicon process with ON Semiconductor's industry-leading silicon drivers, controllers, and enhanced thermal performance packages, providing smaller and more efficient systems optimized for applications in AI data centers, automotive, industrial, aerospace, defense, and security.

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ON Semiconductor collaborates with GlobalFoundries on the development of next-generation GaN power devices.