Ground-based triple junction GaAs solar cell
Ground-based triple-junction GaAs solar cell with a cell thickness of 150±20μm.
The "Triple Junction GaAs Solar Cell for Ground Use" has a cell area of 30.18 cm². The substrate material is GaInP/GaAs/Ge on a Ge substrate, and the cell thickness is 150±20 μm. The average mass is ≦86 mg/cm² (cell). Additionally, the AR coating is TiOx/Al2O3. 【Features】 ■ Substrate material: GaInP/GaAs/Ge on Ge substrate ■ Cell area: 30.18 cm² ■ Average mass: ≦86 mg/cm² (cell) ■ Cell thickness: 150±20 μm ■ AR coating: TiOx/Al2O3 *For more details, please refer to the PDF document or feel free to contact us.
basic information
【Electrical Characteristics】 ■ Average Open Circuit Voltage Voc: 2681mV ■ Average Short Circuit Current Isc: 444mA ■ Voltage at Maximum Power Vmp: 2411mV ■ Current at Maximum Power Imp: 432mA ■ Power at Maximum Power Pmp: 1042mW ■ Average Conversion Efficiency: 34.5% *For more details, please refer to the PDF document or feel free to contact us.
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For more details, please refer to the PDF document or feel free to contact us.
