Cutting Techniques: Material Cutting and Slicing Processing
【Aluminum Nitride AlN / Alumina Al2O3 compatible】 A new technology that is becoming a global trend, fixed abrasive method!
At Shinko Seisakusho, mass production processing using the fixed abrasive method, which is becoming a global trend, is possible! We manufacture solar silicon wafers using the fixed abrasive method (diamond wire) with two types of materials: single crystal and polycrystalline. Currently, the yield rate for the fixed abrasive method has achieved over 95% on a mass production basis, with more than 4 million silicon wafers produced per month. 【Main Supported Materials】 Aluminum Nitride (AlN) / Alumina (Al2O3) / Sapphire / Silicon Carbide (SiC) / Copper (Cu) / Molybdenum (Mo) / Tungsten (W) / Copper Molybdenum / Copper Tungsten / Quartz Glass / Lithium Niobate (LiNbO3) / Lithium Tantalate (LiTaO3) / Barium Titanate (BaTiO3) / Zirconia (ZrO2) / Silicon Nitride (Si3N4) / Cemented Carbide (SK Material) / Ceramic Matrix Composites (CMC) *For more details, please download the PDF catalog or feel free to contact us.
basic information
The fixed abrasive method is known worldwide as a new technology, and it is predicted to become an essential technology for silicon wafer manufacturing, including the reduction of kerf loss and thinning. Our company successfully achieved mass production processing using the fixed abrasive method in 2008. At Shin-Ei Manufacturing, we plan to further expand our facilities for fixed abrasives to meet the increasing needs of our historical customers in the near future.
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For more details, please contact us or download the catalog.
