【FeRAM/ReRAM】RAMXEED
Non-volatile memory! Each has different characteristics, so their suitable applications also vary.
We would like to introduce RAMXEED, a manufacturer of FeRAM/ReRAM that we handle. Ferroelectric memory "FeRAM" is a type of memory that features four characteristics: non-volatility, high rewrite endurance, fast writing, and low power consumption. Data is not lost even when the power is turned off. Additionally, it allows for data overwriting. Furthermore, the resistance change memory "ReRAM" is characterized by non-volatility, low read current, large capacity, and ultra-compact packaging. *Please note that RAMXEED will change its name from Fujitsu Semiconductor Memory Solutions on January 1, 2025. 【FeRAM Features】 ■ Battery-free (green product) ■ Rewrite endurance up to 100 million times that of EEPROM ■ No need to issue rewrite commands ■ No internal boost required for writing ■ Short writing time, resulting in low power consumption during writing *For more details, please download the PDF or feel free to contact us.
basic information
【ReRAM Features】 ■ Data is not lost even when the power is turned off ■ Battery-free (eco-friendly product) ■ Average current of 0.15mA, very low (at 5MHz operation) ■ Maximum current of 0.7mA (at 10MHz operation) ■ Large capacity of 12M bits ■ 11-pin WL-CSP measuring approximately 2mm × 3mm *For more details, please download the PDF or feel free to contact us.
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For more details, please download the PDF or feel free to contact us.
