Report: Intel 22nm Haswell eDRAM
This is a detailed structural analysis report of Intel(R) eDRAM.
The "Intel(R) 22nm Haswell eDRAM" is a detailed structural analysis report on Intel(R) eDRAM, which is embedded DRAM corresponding to the Haswell G82494 processor equipped with the Intel GT3 graphics unit (GPU). This integrated graphics unit has various features, including low-end GT1, mid-range GT2, and high-end GT3. The version with the best performance among GPU ICs is GT3e. 【Features】 ■ GT3e: Composed of embedded DRAM with 9 metal layers and 22nm TriGate transistor technology ■ Silicon source-drain is used for NMOS transistors, while SiGe is used for PMOS transistors For more details, please contact us or download the catalog.
basic information
【Others】 ○ The embedded DRAM capacitor (0.029μm² cell size) is configured with a trench pattern in ILD dielectrics and is supported by metal layers 3 and 4. ○ The bottom of the capacitor trench is supported by via 1 and a metal layer Ta-based barrier layer. ○ NMOS FinFET transistors are used for the eDRAM access transistors, with a word line pitch of 107nm. ● For more details, please contact us or download the catalog.
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【Purpose】 ○ As a structural analysis report ● For more details, please contact us.
