[Example] Cleaning process with 'Particle-PLUS' CCP
A case study on CCP (Capacitively Coupled Plasma) etching, which is one of the representative dry etching methods, using 'Particle-PLUS' analysis.
"Particle-PLUS" is a simulation software suitable for research, development, and manufacturing of devices and materials using plasma. - It specializes in low-pressure plasma analysis. - It can perform advanced physical model analysis such as CCP and external circuit models. - It excels in plasma simulation for low-pressure gases, where calculations with fluid models are challenging. - It supports 2D (two-dimensional) and 3D (three-dimensional) analyses, allowing efficient analysis of complex models. - As a strength of our in-house developed software, it can perform CCP and magnetron sputtering calculations with standard features, and customization to fit customer devices is also possible. ◆ Supports various cases ◆ - Magnetron sputtering - PVD, plasma CVD - Capacitively coupled plasma (CCP) - Dielectric barrier discharge (DBD) - Electrophoresis, etc. ◆ Outputs various calculation results ◆ - Potential distribution - Density distribution/temperature distribution/generation distribution of electrons and ions - Particle flux and energy flux to the walls - Energy spectrum of electrons and ions at the walls - Density distribution/temperature distribution/velocity distribution of neutral gas, etc. *For more details, please feel free to contact us.
basic information
**Features** - The time scheme uses an implicit method, allowing for stable time evolution to be calculated over a large time step Δt compared to conventional methods. - The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. - The neutral gas module determines the initial neutral gas distribution used in the plasma module above, allowing for quick evaluation of gas flow using the DSMC method. - The sputtered particle module calculates the behavior of atoms sputtered from the target in plasma and neutral gas environments in magnetron sputtering devices, enabling quick evaluation of flux distribution on opposing substrates. *For other functions and details, please feel free to contact us.*
Price range
Delivery Time
Model number/Brand name
Particle-PLUS
Applications/Examples of results
【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to achieve high-density plasma - Damage to chamber walls - Optimization of power using external circuit models - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be smooth and simulated with relatively realistic voltages - Calculations are relatively stable to avoid applying unreasonable voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage for efficient material sputtering 【Ion Implantation】 - The influence of the substrate on the erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - It is possible to observe physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and the damage to the chamber walls - By changing calculation conditions, optimization of high-density plasma generation at low power is possible
