Example: Particle-PLUS: GEC-CCP Device Plasma Analysis
Introduction to Particle-PLUS Analysis Case: "Plasma Analysis of GEC-CCP Device" 3D Simulation Case
This is a 3D analysis case related to CCP (Capacitively Coupled Plasma) etching, which is one of the representative dry etching methods. Particle-PLUS specializes in plasma analysis within vacuum chambers and can perform simulations of etching rates and other parameters at high speed. ◇ Features of 'Particle-PLUS' - Excels in low-pressure plasma analysis. - By combining axisymmetric models with mirror-symmetric boundary conditions, it can obtain results quickly without the need for full device simulations. - Specializes in plasma simulations for low-pressure gases, where fluid modeling is challenging. - Supports both 2D and 3D, allowing efficient analysis even for complex models. - As a strength of our in-house developed software, customization to fit customer devices is also possible. ◆ Outputs various calculation results ◆ - Potential distribution - Density distribution/temperature distribution/generation distribution of electrons and ions - Particle flux and energy flux to the walls - Energy spectrum of electrons and ions at the walls - Density distribution/temperature distribution/velocity distribution of neutral gas and more. *For more details, please feel free to contact us.
basic information
**Features** - The time scheme uses an implicit method, allowing for stable time evolution calculations over a large time step Δt compared to conventional methods. - The collision reaction model between neutral gas and electrons and ions employs the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. - The neutral gas module determines the initial neutral gas distribution used in the plasma module above, allowing for quick evaluation of gas flow using the DSMC method. - The sputtered particle module calculates the behavior of atoms sputtered from the target in devices such as magnetron sputtering systems, enabling quick evaluation of flux distribution on opposing substrates. *For other functions and details, please feel free to contact us.*
Price range
Delivery Time
Model number/Brand name
Particle-PLUS
Applications/Examples of results
【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to achieve high-density plasma - Damage to chamber walls - Optimization of power using an external circuit model - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be smooth and simulated with relatively realistic voltages - Calculations are relatively stable to avoid applying excessive voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage to efficiently sputter materials 【Ion Implantation】 - The influence of the substrate on the erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - It is possible to observe physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and damage to the chamber walls - Changing calculation conditions allows for the optimization of high-density plasma generation at low power
Detailed information
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◇Model Overview Analysis of Ar Plasma in 3D (Three-Dimensional) GEC-CCP Device
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Potential distribution and self-bias effect
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Growth of Plasma Observed through Electron Density Distribution
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Particle density distribution (steady state) - Electron density distribution (periodic average) - Ar+ density distribution (periodic average) It can be seen that there are more ions than electrons near the surface, indicating the formation of a sheath.
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Reaction rate distribution - Ionization rate (period average) - Excitation rate (period average)
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Temperature distribution - Electron temperature (periodic average) - Ar+ temperature (periodic average) In a particle model, it is possible to analyze the non-equilibrium temperature distribution of plasma. (In a fluid model, it is necessary to assume a velocity distribution function, making it difficult to accurately evaluate the temperature distribution of low-temperature plasma.)
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Energy distribution - Electron energy (period average) - Ar+ energy (period average)
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- Magnitude of ion velocity (period average) - Joule heat (period average) Ions are strongly attracted by the self-bias of the power supply electrode. Additionally, Joule heat (the dot product of current density and electric field) increases in that area.
