[Example] "Particle-PLUS" RF Magnetron Sputtering
Introduction to Particle-PLUS Analysis Case: "RF Magnetron Sputtering Analysis" Simulation Example
This is an analysis case of RF magnetron sputtering, which is one of the film deposition methods using process plasma. Particle-PLUS specializes in plasma analysis within vacuum chambers and can quickly simulate deposition rates and other parameters. ◇ Features of 'Particle-PLUS' - Excels in low-pressure plasma analysis. - By combining axisymmetric models with mirror-symmetric boundary conditions, results can be obtained quickly without the need for full device simulations. - Specializes in plasma simulations for low-pressure gases, where fluid modeling is challenging. - Supports 2D (two-dimensional) and 3D (three-dimensional) analyses, efficiently handling complex models. - As a strength of our in-house developed software, customization to fit customer devices is also possible. ◆ Various calculation results can be output ◆ - Potential distribution - Density distribution/temperature distribution/generation distribution of electrons and ions - Particle flux and energy flux to the walls - Energy spectrum of electrons and ions at the walls - Density distribution/temperature distribution/velocity distribution of neutral gas and more. *For more details, please feel free to contact us.
basic information
**Features** ● The time scheme employs an implicit method, allowing for stable time evolution calculations over a large time step Δt compared to conventional methods. ● The collision reaction model between neutral gas and electrons and ions uses the Monte Carlo Scattering method, enabling accurate and rapid calculations of complex reaction processes. ● The neutral gas module determines the initial neutral gas distribution used in the plasma module above, allowing for quick evaluation of gas flow using the DSMC method. ● The sputtered particle module calculates the behavior of atoms sputtered from the target in plasma and neutral gas environments in magnetron sputtering devices, enabling quick evaluation of flux distribution on opposing substrates. *For other functions and details, please feel free to contact us.*
Price range
Delivery Time
Model number/Brand name
Particle-PLUS
Applications/Examples of results
【Dual Frequency Capacitive Coupled Plasma】 - Optimization of voltage and other parameters to obtain high-density plasma - Damage to chamber walls - Optimization of power using external circuit models - It is possible to apply voltages to the electrode plates that align with real devices - The waveform of the applied voltage can be simulated smoothly and with relatively realistic voltages - Calculations are relatively stable to avoid applying excessive voltages 【DC Magnetron Sputtering】 - Uniformity of erosion dependent on magnetic field distribution - Adsorption distribution of sputtered materials on the substrate 【Pulsed Voltage Magnetron Sputtering】 - Optimization of the application time of pulsed voltage for efficient material sputtering 【Ion Implantation】 - The influence of the substrate on the erosion distribution 【Time Evolution of Applied Voltage on Electrode Plates】 - It is possible to observe physical quantities that are difficult to measure experimentally, such as electron density and ion velocity distribution - By investigating electron density and ion velocity distribution, it is possible to examine the uniformity of the film and the damage to the chamber walls - By changing calculation conditions, optimization for generating high-density plasma at low power is possible
Detailed information
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Introduction to Particle-PLUS Analysis Examples RF Magnetron Sputtering (Left: Ionization Generation Distribution / Right: Electron Density Distribution)
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◇Model Overview Case study of sputtering analysis of Ti target by Ar plasma in an axisymmetric model.
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Magnetic field and gas density - Magnetic flux density - Ar gas density
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Electric potential and electric field - Electric potential - Electric field Since the speed of electrons is significantly faster than that of ions, ions are left behind in the plasma, resulting in a slightly positive electric potential in the plasma.
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Number of particles and power consumption - Time evolution of the number of particles - Power consumption (DC component) It can be seen that after approximately 5×10^(−5) seconds, the physical quantities change little and reach a steady state.
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Plasma density - Electron number density - Ar ion number density Compared to direct current discharge, alternating current discharge results in a broader electron distribution (with a wider tail). This trend can also be reproduced in simulations.
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Plasma temperature - Electron temperature (time-averaged) - Ar+ temperature (time-averaged) Similar to particle number density, particle temperature also becomes broader (with a wider tail) in AC discharge. This trend can also be reproduced in simulations.
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Ion flow rate - Ar ion number flux - Ar ion energy flux
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Sputtering and Film Formation - Ti Erosion Rate (Target) - Ti Deposition Rate (Substrate/Wall)
