GaN (N-face) rough surface etching solution
The surface of the GaN (N-face) film can be effectively roughened through etching, improving the light extraction efficiency.
The features of this product are as follows: - It is possible to form desired unevenness and improve light extraction efficiency. - Processing can be done at room temperature to high temperatures. - The in-plane uniformity of the uneven surface shape is good. Keywords: frost treatment, unevenness, LED, light-emitting diode, gallium nitride.
basic information
Price range
Delivery Time
Applications/Examples of results
Please contact us.
catalog（1）
Download All Catalogs
News about this product（2）
-
Semicon Taiwan 2012 Exhibition Information
Our company will be showcasing various etching solutions, including silver nanowire etching solution (for ITO alternative transparent conductive films) and GaN film (N-face) roughening etching solution (for blue LEDs), at the SUMITRONICS TAIWAN booth during SEMICON Taiwan 2012. We cordially invite you to stop by and take a look at this opportunity.
-
Development of etching solution for roughening GaN film (N-face) for blue light-emitting diodes (blue LED)
Lin Jun Pharmaceutical Industry Co., Ltd. has recently started handling a high-performance etching solution that can etch and roughen the surface of GaN films (N-face) in the blue light-emitting diode process. By roughening the surface, the light extraction efficiency is improved, resulting in a higher luminous efficiency. Our company will continue to propose environmentally conscious functional chemicals to many companies to support the improvement of luminous efficiency in blue LEDs. □ For other functions and details, please refer to the materials.
