Al Damage-Free Si Etching Solution (Anisotropic)
Al and Al alloy films are anisotropically etched well without corrosion.
The features of this product are as follows: - It enables the formation of a smooth etching surface. - Etching can be performed regardless of the metal opening ratio on the device surface. - There is minimal degradation of the etching solution. - It is recommended to use Pure Etch ZE series (Al damage-free insulating film etching solution) as a pretreatment solution. Keywords: wet etching, silicon anisotropic etching
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Semicon Taiwan 2012 Exhibition Information
Our company will be showcasing various etching solutions, including silver nanowire etching solution (for ITO alternative transparent conductive films) and GaN film (N-face) roughening etching solution (for blue LEDs), at the SUMITRONICS TAIWAN booth during SEMICON Taiwan 2012. We cordially invite you to stop by and take a look at this opportunity.
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Development of 'Al Damage-Free Insulating Film Etching Solution'
Lin Jun Pharmaceutical Industry Co., Ltd. has recently developed a damage-free aluminum (Al) etching solution for silicon oxide and silicon nitride (insulation film) etching. By using this etching solution, it becomes possible to etch insulation films without corroding Al or Al alloys, eliminating the need for processes to protect Al or Al alloys, which can improve the overall throughput of the manufacturing process. Our company will continue to propose functional chemical solutions that emphasize energy savings and cost reduction through process shortening to many companies.
