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[Analysis Case] Preprocessing Technology for Specific Areas of Wafers and Chips_C0184
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[Analysis Case] Composition and Thickness Evaluation of Ultra-Thin SiON Film_C0002
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[Analysis Case] Evaluation of the Diffusion Layer of Power Transistors (DMOSFET) C0154
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[Analysis Case] Breakdown Observation of 600V Rated SiC Schottky Diode_C0183
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[Analysis Case] SCM Analysis of SiC Planer Power MOS_C0252
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[Analysis Case] Depth Direction Analysis of Dopant Elements in SiC by SIMS 1_C0247
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[Analysis Case] Evaluation of Dopants in SiC Power MOSFETs Using SIMS_C0249
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[Analysis Case] Depth Direction Analysis of Al in SiC Schottky Diode by SIMS_C0250
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[Analysis Case] Photoluminescence Mapping Measurement of SiC Schottky Diode_C0254
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[Analysis Case] Dopant Investigation in NPT-IGBT by SIMS_C0256
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[Analysis Case] Evaluation of Gate Oxide Film on SiC Substrate_C0281
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[Analysis Case] SSDP-SIMS Analysis on SiC Substrate_C0284
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[Analysis Case] Depth Direction Analysis of Dopant Elements in SiC Using SIMS 2_C0298
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[Analysis Case] Evaluation of the Active Layer of SiC Power MOSFETs using SIMS, SCM, and TEM_C0291
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[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFET_C0292
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[Analysis Case] Lock-in Heat Generation Analysis of Package Products_C0310
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[Analysis Case] SRA/SIMS Evaluation Case of Hydrogen Injection Sample_C0322
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[Analysis Case] Evaluation of Bonding State and Film Thickness of SiC_C0394
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[Analysis Case] SIMS Analysis of Compound Layered Structure Sample_C0269
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[Analysis Case] Composition Analysis of GaN-based LED Structure by SIMS_C0289
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[Analysis Case] Evaluation of Film-Forming Component's Encroachment on the Back Side of the Wafer_C0230
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[Analysis Case] Evaluation of Si Natural Oxide Film Thickness_C0279
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[Analysis Case] SIMS Measurement of Special-Shaped Samples_C0266
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[Analysis Case] Evaluation of Ga and Al Diffusion into Si Substrate Using SSDP-SIMS_C0267
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[Analysis Case] Evaluation of Element Distribution in Textured GaN-based LEDs_C0248
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[Analysis Case] Depth Profile Concentration Analysis of Impurities in GaN-based LED Structures Using SIMS_C0251
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[Analysis Case] Quality Evaluation of SiC Substrates_C0280
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[Analysis Case] Evaluation of Carrier Density Distribution in Power Devices_C0285
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[Analysis Case] Evaluation of Dopant and Carrier Concentration Distribution in Power Devices_C0286
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[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure_C0293
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![[Analysis Case] Preprocessing Technology for Specific Areas of Wafers and Chips_C0184](https://image.mono.ipros.com/public/catalog/image_generated/01/f48/210197/210197_IPROS2135801378089178858_1.jpg?w=120&h=170)
![[Analysis Case] Composition and Thickness Evaluation of Ultra-Thin SiON Film_C0002](https://image.mono.ipros.com/public/catalog/image/01/e0d/210262/IPROS20972358062892723280.jpeg?w=120&h=170)
![[Analysis Case] Evaluation of the Diffusion Layer of Power Transistors (DMOSFET) C0154](https://image.mono.ipros.com/public/catalog/image_generated/01/867/210221/210221_IPROS4393181250002903218_1.jpg?w=120&h=170)
![[Analysis Case] Breakdown Observation of 600V Rated SiC Schottky Diode_C0183](https://image.mono.ipros.com/public/catalog/image_generated/01/a8c/210198/210198_IPROS8296403375117928315_1.jpg?w=120&h=170)
![[Analysis Case] SCM Analysis of SiC Planer Power MOS_C0252](https://image.mono.ipros.com/public/catalog/image/01/1a7/333664/IPROS2467688763859276970.jpg?w=120&h=170)
![[Analysis Case] Depth Direction Analysis of Dopant Elements in SiC by SIMS 1_C0247](https://image.mono.ipros.com/public/catalog/image/01/e0f/333688/IPROS8465960026781905502.jpg?w=120&h=170)
![[Analysis Case] Evaluation of Dopants in SiC Power MOSFETs Using SIMS_C0249](https://image.mono.ipros.com/public/catalog/image/01/12a/333691/IPROS695027548296713044.jpg?w=120&h=170)
![[Analysis Case] Depth Direction Analysis of Al in SiC Schottky Diode by SIMS_C0250](https://image.mono.ipros.com/public/catalog/image/01/75a/333695/IPROS2951223774340621010.jpg?w=120&h=170)
![[Analysis Case] Photoluminescence Mapping Measurement of SiC Schottky Diode_C0254](https://image.mono.ipros.com/public/catalog/image/01/07c/334607/IPROS6225395964720680096.jpg?w=120&h=170)
![[Analysis Case] Dopant Investigation in NPT-IGBT by SIMS_C0256](https://image.mono.ipros.com/public/catalog/image/01/4b3/334695/IPROS311240384643880250.jpg?w=120&h=170)
![[Analysis Case] Evaluation of Gate Oxide Film on SiC Substrate_C0281](https://image.mono.ipros.com/public/catalog/image/01/912/334710/IPROS6253915519104732463.jpg?w=120&h=170)
![[Analysis Case] SSDP-SIMS Analysis on SiC Substrate_C0284](https://image.mono.ipros.com/public/catalog/image/01/ef6/334716/IPROS17266824293496849887.jpeg?w=120&h=170)
![[Analysis Case] Depth Direction Analysis of Dopant Elements in SiC Using SIMS 2_C0298](https://image.mono.ipros.com/public/catalog/image/01/3ba/334753/IPROS346150606312769678.jpg?w=120&h=170)
![[Analysis Case] Evaluation of the Active Layer of SiC Power MOSFETs using SIMS, SCM, and TEM_C0291](https://image.mono.ipros.com/public/catalog/image/01/2a6/334823/IPROS23490019163000192216.jpeg?w=120&h=170)
![[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFET_C0292](https://image.mono.ipros.com/public/catalog/image/01/c6b/334953/IPROS6627451355380541794.jpg?w=120&h=170)
![[Analysis Case] Lock-in Heat Generation Analysis of Package Products_C0310](https://image.mono.ipros.com/public/catalog/image/01/39b/334954/IPROS3423498077879419942.jpg?w=120&h=170)
![[Analysis Case] SRA/SIMS Evaluation Case of Hydrogen Injection Sample_C0322](https://image.mono.ipros.com/public/catalog/image/01/495/334990/IPROS74589917788208244235.jpeg?w=120&h=170)
![[Analysis Case] Evaluation of Bonding State and Film Thickness of SiC_C0394](https://image.mono.ipros.com/public/catalog/image/01/fd4/335525/IPROS96125273122693251001.jpeg?w=120&h=170)
![[Analysis Case] SIMS Analysis of Compound Layered Structure Sample_C0269](https://image.mono.ipros.com/public/catalog/image/01/c12/334703/IPROS19967209626373389615.jpeg?w=120&h=170)
![[Analysis Case] Composition Analysis of GaN-based LED Structure by SIMS_C0289](https://image.mono.ipros.com/public/catalog/image/01/a25/334720/IPROS2491034340471351485.jpg?w=120&h=170)
![[Analysis Case] Evaluation of Film-Forming Component's Encroachment on the Back Side of the Wafer_C0230](https://image.mono.ipros.com/public/catalog/image/01/3e7/333632/IPROS7091402142554460099.jpg?w=120&h=170)
![[Analysis Case] Evaluation of Si Natural Oxide Film Thickness_C0279](https://image.mono.ipros.com/public/catalog/image/01/595/334621/IPROS75725532068541659755.jpeg?w=120&h=170)
![[Analysis Case] SIMS Measurement of Special-Shaped Samples_C0266](https://image.mono.ipros.com/public/catalog/image/01/5ce/334625/IPROS32963134302969716210.jpeg?w=120&h=170)
![[Analysis Case] Evaluation of Ga and Al Diffusion into Si Substrate Using SSDP-SIMS_C0267](https://image.mono.ipros.com/public/catalog/image/01/ba6/334635/IPROS45683494058701876967.jpeg?w=120&h=170)
![[Analysis Case] Evaluation of Element Distribution in Textured GaN-based LEDs_C0248](https://image.mono.ipros.com/public/catalog/image/01/5b4/334636/IPROS6207553116828601953.jpg?w=120&h=170)
![[Analysis Case] Depth Profile Concentration Analysis of Impurities in GaN-based LED Structures Using SIMS_C0251](https://image.mono.ipros.com/public/catalog/image/01/a8c/334693/IPROS8414471342007927826.jpg?w=120&h=170)
![[Analysis Case] Quality Evaluation of SiC Substrates_C0280](https://image.mono.ipros.com/public/catalog/image/01/13c/334696/IPROS77783990163959754524.jpeg?w=120&h=170)
![[Analysis Case] Evaluation of Carrier Density Distribution in Power Devices_C0285](https://image.mono.ipros.com/public/catalog/image/01/8e8/334698/IPROS1380203261589991348.jpg?w=120&h=170)
![[Analysis Case] Evaluation of Dopant and Carrier Concentration Distribution in Power Devices_C0286](https://image.mono.ipros.com/public/catalog/image/01/a55/334699/IPROS220288198950014022.jpg?w=120&h=170)
![[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure_C0293](https://image.mono.ipros.com/public/catalog/image/01/c8d/334722/IPROS9135988173715918097.jpg?w=120&h=170)