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[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in Si by SIMS_C0354
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[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in SiC by SIMS_C0421
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[Analysis Case] Evaluation of Impurity Concentration in Gallium Oxide Ga2O3 Films by SIMS_C0416
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[Analysis Case] Low-Temperature Photoluminescence Spectrum of Si Subjected to Ion Implantation and Annealing Treatment_C0434
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[Analysis Case] Evaluation of Metal Element Concentration Near the Surface of Gallium Oxide Ga2O3 Film_C0440
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[Analysis Case] Evaluation of the Diffusion Layer of SiCPowerMOSFET by SCM and SMM_C0401
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[Analysis Case] Evaluation of Carrier Density Distribution of Si-IGBT Chip_C0443
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[Analysis Case] In-plane film thickness evaluation of Au thin film on wafer using XRF_C0480
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[Analysis Case] Evaluation of Interstitial Carbon in Si Substrate by Low-Temperature PL and SIMS Analysis_C0481
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[Analysis Case] Evaluation of Si-based IGBT Chip Cross-section by Low-Temperature Micro Photoluminescence Analysis_C0485
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一般財団法人材料科学技術振興財団 MST
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![[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in Si by SIMS_C0354](https://image.mono.ipros.com/public/catalog/image/01/66b/335303/IPROS8137452056167939398.jpg?w=120&h=170)
![[Analysis Case] Removal of Organic Contaminants by Etching_C0383](https://image.mono.ipros.com/public/catalog/image/01/305/335365/IPROS23107648182936016829.jpeg?w=120&h=170)
![[Analysis Case] Polarity Evaluation of GaN by ABF-STEM Observation_C0409](https://image.mono.ipros.com/public/catalog/image/01/633/335821/IPROS09954564476560895596.jpeg?w=120&h=170)
![[Analysis Case] Evaluation of High Electron Mobility Transistors_C0410](https://image.mono.ipros.com/public/catalog/image/01/11a/335826/IPROS40245419324556860976.jpeg?w=120&h=170)
![[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in SiC by SIMS_C0421](https://image.mono.ipros.com/public/catalog/image/01/7e1/338778/IPROS8112160198559289712.jpg?w=120&h=170)
![[Analysis Case] Evaluation of Impurity Concentration in Gallium Oxide Ga2O3 Films by SIMS_C0416](https://image.mono.ipros.com/public/catalog/image/01/4f2/338791/IPROS7131065328425391968.jpg?w=120&h=170)
![[Analysis Case] Low-Temperature Photoluminescence Spectrum of Si Subjected to Ion Implantation and Annealing Treatment_C0434](https://image.mono.ipros.com/public/catalog/image/01/d32/349120/IPROS7345426172157653475.jpg?w=120&h=170)
![[Analysis Case] Evaluation of Metal Element Concentration Near the Surface of Gallium Oxide Ga2O3 Film_C0440](https://image.mono.ipros.com/public/catalog/image/01/6c0/355165/IPROS5407787901855916126.jpg?w=120&h=170)
![[Analysis Case] Evaluation of Silicon Oxide Film by XAFS_C0439](https://image.mono.ipros.com/public/catalog/image/01/bb4/357029/IPROS2120569670430523854.jpg?w=120&h=170)
![[Analysis Case] Evaluation of the Diffusion Layer of SiCPowerMOSFET by SCM and SMM_C0401](https://image.mono.ipros.com/public/catalog/image/01/6bb/335782/IPROS7129411669311890996.jpg?w=120&h=170)
![[Analysis Case] Evaluation of Carrier Density Distribution of Si-IGBT Chip_C0443](https://image.mono.ipros.com/public/catalog/image/01/5cb/364339/IPROS6647405525166754641.jpg?w=120&h=170)
![[Analysis Case] Band Gap Evaluation of Oxidized and Nitrided Thin Films_C0462](https://image.mono.ipros.com/public/catalog/image/01/eba/369536/IPROS76187887167628431145.jpeg?w=120&h=170)
![[Analysis Case] Evaluation of GaN Crystal Growth by XRD and EBSD_C0384](https://image.mono.ipros.com/public/catalog/image/01/1e1/335370/IPROS5222097239660974286.jpg?w=120&h=170)
![[Analysis Case] Evaluation of Ion Implantation Damage in GaN by XAFS_C0472](https://image.mono.ipros.com/public/catalog/image/01/f94/379887/IPROS3767216789808130509.jpg?w=120&h=170)
![[Analysis Case] Analysis of Wafer Adhesive Sheet Components_C0501](https://image.mono.ipros.com/public/catalog/image/01/585/401698/IPROS847523147551117520.jpg?w=120&h=170)
![[Analysis Case] Stress Evaluation by Raman Mapping_C0522](https://image.mono.ipros.com/public/catalog/image/01/ca3/452943/IPROS47738652721554492.jpg?w=120&h=170)
