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[Analysis Case] Evaluation of Depth Profile Concentration Distribution of Alkali Metals in SiO2 Using C60 has been published.

一般財団法人材料科学技術振興財団　MST

一般財団法人材料科学技術振興財団　MST

Alkali metals such as Li, Na, and K are key elements in various failure causes in semiconductors. These are referred to as mobile ions that can move within the film during measurement, making it difficult to obtain an accurate distribution. In this study, by conducting depth profiling analysis using a C60 (fullerene) sputter ion source in TOF-SIMS, it was found that the movement of alkali metals can be suppressed even at room temperature. This measurement allows for qualitative and quantitative analysis of impurities within SiO2 films. ★★★★★★★★★★★★★★★★★ 　Please see the link for the analysis data ★★★★★★★★★★★★★★★★★

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[Analysis Case] Evaluation of Depth Profile Concentration Distribution of Alkali Metals in SiO2 Using C60
The concentration distribution evaluation of alkali metals in SiO2 using TOF-SIMS has become possible at room temperature. Please see the link for detailed data!
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Related product information

  • TOF-SIMS分析（飛行時間型二次イオン質量分析法）の製品画像です
    [TOF-SIMS] Time-of-Flight Secondary Ion Mass Spectrometry

    This is a method for structural analysis of the sample surface. Due to its sensitivity to the surface compared to other analytical devices, it is suitable for identifying organic contaminants on the very surface.

    By reducing the amount of ion irradiation at one time, it becomes possible to maintain the molecular state of the surface and generate secondary ions. The obtained secondary ions are analyzed using a Time-of-Flight mass spectrometer.

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