RTP-100 High-Speed Annealing Heating System for Φ4 Compatible Vacuum and Process Gas
This is an annealing furnace manufactured by Unitemp Japan, applicable to a wide range of applications requiring rapid and uniform heat treatment, including the crystal growth of GaN.
The "RTP-100" is a tabletop vacuum process rapid heating furnace that is suitable for research and development as well as prototype development, and is among the smallest in the industry. It supports 4-inch wafers and allows for the processing of small samples using a dedicated susceptor. With a maximum temperature of 1200°C, it accommodates a variety of gas purge environments. It can be used for various purposes, such as crystal growth of new materials like GaN and SiC, and sintering of paste materials. 【Features】 - Supports nitrogen gas, oxygen gas, and forming gas (hydrogen + nitrogen) purging, as well as high-concentration hydrogen gas purging. - Enables precise rapid heating with 18 IR (infrared) heaters on the top and bottom. - High-purity quartz chamber. - Supports cooling through nitrogen gas purging. - Up to 4 process gas lines (MFC). - Achieves a vacuum level of 10^-1 Pa (10^-3 Pa possible with the HV model equipped with TMP). - Comes standard with a touch panel monitor for easy operation. *For more details, please refer to the PDF document or feel free to contact us.
basic information
【Specifications】 ■Device size (WxDxH): 504 x 504 x 700mm ■Device weight: Approximately 55kg ■Effective object size (WxD): 100 x 100mm ■Heating method: IR heater ■Maximum reachable temperature: 1200℃ ■Maximum heating rate (depending on the thermal capacity of the object): 150K/sec. ■Maximum cooling rate (depending on the thermal capacity of the object): 190K/min. (T=1200℃>400℃) ■Cooling method: Nitrogen gas purge method ■Vacuum reach: 10-1Pa *HV model is 10-3Pa ■Controller: 7-inch touch panel controller (SIMATIC TP-700) ■Number of profile program registrations: Up to 50 programs ■Number of program steps: Up to 50 steps ■Process data storage location: USB memory/Ethernet ■Power specifications: 2x three-phase 200V 50/60Hz maximum 40A (total 80A) *For more details, please refer to the PDF document or feel free to contact us.
Price information
10 million to 15 million yen (depending on the model and options)
Price range
P7
Delivery Time
OTHER
The delivery time is approximately 3 to 4 months from the confirmation of your order (please contact us for more details, as the delivery time may vary depending on the situation).
Model number/Brand name
RTP-100/RTP-100-HV
Applications/Examples of results
【Applications】 ■ Various high-temperature heat treatments from Si to SiC, GaN, Ga2O3 materials ■ Nitride and oxide film formation ■ Crystal activation after ion implantation ■ Ohmic contact formation ■ Heat treatment of low-k materials ■ Reduction of Si roughness through hydrogen annealing *For more details, please refer to the PDF document or feel free to contact us.
Line up（6）
| Model number | overview |
|---|---|
| RTP-100 | |
| RTP-100-HV | |
| RTP-150 | |
| RTP-150-HV | |
| RTP-150-EP | |
| VPO-1000-300 |
