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Optimization of Wide Bandgap Semiconductor Switches

Publication on the optimization of gate drive voltage and further optimization procedures!

In the world of advanced power electronics, the acceleration of switching speeds has made EMI compliance a significant issue. Optimizing gate drive from the development stage and minimizing electromagnetic emissions can be aided by correlational measurements of time data and frequency data. This document provides a detailed introduction to the "Optimization of Wide Bandgap Semiconductor Switches," discussing challenges and the solutions offered by Rohde & Schwarz. [Contents] ■ Challenges ■ Rohde & Schwarz Solutions ■ Applications - Correlation analysis of time data and frequency data using gated FFT - Optimization of gate drive voltage concerning EMI emissions - Further optimization procedures ■ Conclusion *For more details, please refer to the PDF document or feel free to contact us.

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Optimization of Wide Bandgap Semiconductor Switches

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Rohde & Schwarz was founded in 1933 by Dr. Rohde and Dr. Schwarz. The company has maintained its original purpose since its inception: "to remain a technology company that creates innovative solutions in the fields of electronics and wireless communications, contributing to society." The Rohde & Schwarz Group (headquartered in Munich, Germany) specializes in wireless communications and leads the world in electronic measurement, broadcasting, secure communications, wireless monitoring, and radio detection. Rohde & Schwarz Japan celebrated its 20th anniversary on April 1, 2023.