PEC process equipment
Achieving low prices with a simple structure! Introducing the GaN wafer low-damage etching device.
We would like to introduce our "PEC Process Equipment." You can choose the light source and wavelength from UVA and UVC, enabling high-speed deep etching through the heating of the etching solution. Etching rinse parameters can be set via a touch panel input. Please feel free to contact us when you need assistance. 【Features】 ■ From 10mm square small chips to φ6 inch wafers ■ Capable of low-damage etching for GaN ■ Achieves low cost with a simple structure ■ Enables high-speed deep etching *For more details, please refer to the PDF document or feel free to contact us.
basic information
【Specifications】 ■Model: PEC-6 ■Etching Method ・Photo-Electro Chemical ■Applicable Work: □10mm small chip, φ2 to 6 inches ■UVA Light Source: Ultra-high pressure mercury lamp 315–400nm 15mW/sm2 or more ■UVC Light Source: Plasma light source 220–320nm 12mW/sm2 or more ■Chemical Supply: 2 nozzle air compression method for etching solution and rinse solution ■External Dimensions: 1470 (H) × 650 (W) × 750 (D) *For more details, please refer to the PDF document or feel free to contact us.
Price range
Delivery Time
Applications/Examples of results
For more details, please refer to the PDF document or feel free to contact us.
