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We achieve film formation by freely controlling reactive sputtering and alloy sputtering.

Proprietary HiTUS Technology This is a groundbreaking technology that uses a helicon ion source as a plasma source, allowing for gridless acceleration of high-density ions obtained from it solely by applying a bias voltage to the target. As it is an ion beam-type film deposition method using a remote plasma approach, it enables stable film formation even for ferromagnetic films and dielectric reaction films, which are challenging for magnetron sputtering devices. By individually controlling ion density and target application, it not only accommodates a wide range of film deposition conditions but also achieves high deposition rates. Reactive control is also easy, as the ionized target material can be delivered to the substrate by controlling the ion supply and sputter rate, allowing for reactions during film formation on the substrate surface. With the ability to use multiple targets ranging from 2 inches to 8 inches in diameter and switch between them for multilayer film deposition, co-sputtering with simultaneous application to multiple targets is also easily achievable. Independent gas supply near the target and substrate allows for the reproducible deposition of various multi-reaction multilayer films, including oxide and nitride films. Since the substrate surface is not exposed to plasma, film deposition can be performed while keeping the substrate surface at a low temperature.