High-performance Single-wafer Processing Atmospheric Pressure CVD (APCVD) System (A200V)
Small quantities and wide varieties. NSG(SiO2)/PSG/BPSG deposition. Single-wafer processing atmospheric pressure CVD (APCVD) system (Compatible with 8-inch SiC wafers)
A200V is a single-wafer processing atmospheric pressure CVD system (APCVD system) for silicon oxide (SiO2) deposition, such as interlayer insulating deposition, passivation deposition (protective deposition), and sacrificial deposition. 【Features】 ・Ideal for insulating depositions and diffusion/plasma mask depositions. ・Low particle film deposition by single-wafer face-down deposition. ・High safety and deposition stability by using a sealed chamber. ・Wafer warp correction function (patented) for SiC wafers. ・Low-load, long-cycle maintenance. ・Compact cabinet and adjacent installation to the mirror type for space saving. ・Low CoO (low running cost) 【Applications】 ・Interlayer dielectric deposition for power semiconductors (NSG/PSG/BPSG) ・Hard mask for diffusion/ion implantation, Sacrificial depositions (NSG) ・Passivation depositions (protective depositions, insulating depositions) (NSG) ・Optical Waveguide (NSG/BPSG) *For more details, please contact us or download the catalog for further information.
basic information
The face-down deposition method, in which the wafer is heated in a sealed chamber with the deposition surface facing down, the back side adsorbed, and the process gas is blown up from the bottom, achieves safe, high-quality deposition with low particle counts. The patented wafer warpage correction function enables reliable adsorption of wafers with large warpage, such as SiC wafers, to achieve excellent film thickness uniformity. The composition reducing the adhesion of side reaction products around the wafer improves maintainability (low load and long cycle time). The compact cabinet size allows adjacent installation to minimize the footprint. ●Equipment size (mm): 890(W) x 2300(D) x 2250(H) ●Gas type: SiH4/O2 (SiH4/PH3/B2H6/O2/N2) TEOS/O3 (TEOS/TMOP/TEB/O3/O2/N2) (optional) ●Deposition temperature: 350~450 degrees. *For more details, please contact us or download the catalog to view.
Price range
Delivery Time
Model number/Brand name
A200V
Applications/Examples of results
【Applications】 ・Interlayer dielectric for power semiconductors (NSG/PSG/BPSG) ・Hard mask for diffusion/implanter, Sacrificial deposition (NSG) ・Passivation deposition (protective deposition, insulating deposition) (NSG) ・Optical Waveguide (NSG/BPSG) 【Delivery Record】 ・Domestic and foreign semiconductor device manufacturers. ・Universities, research institutes, and research laboratories.
