Glass Substrate Deposition System “Low Temperature Deposition” “Flexible Substrate Support”
4.5 generation glass substrate deposition system for rigid/flexible devices such as FPD.
4.5 generation glass substrate deposition system for rigid/flexible devices such as FPD. 【Features】 ・Low temperature (150-300 degrees C) deposition ・Deposition of 100 nm SiO2 film on 4.5 generation glass substrates at 250 degrees C with a throughput of 25 wafers/hour or more ・Simple maintenance ・Low CoO (low running cost) ・High-quality SiO2 deposition formation: low stress, no plasma damage, small particles ・Low installation and maintenance cost: small footprint, no need for vacuum or plasma treatment 【Applications】 ・Insulating deposition for FPD (NSG) ・Oxide semiconductor TFT passivation deposition (NSG) *For more details, please contact us or download the catalog to view.
basic information
Equipped with two gas heads with an effective deposition width of 760 mm and an adsorption-type heating stage achieving temperature controllability within ±3%. It is capable of depositing 100 nm SiO2 deposition on 4.5 generation glass substrates at 250 degrees C with a throughput of 25 wafers/hour or more, ensuring deposition thickness uniformity of less than 10%. ●System size (mm): 1300(W) x 7350(D) x 2000(H) ●Gases: SiH4, O3/O2, PH3, B2H6 ●Deposition temperature: 150-300 degrees C *For more details, please contact us or download the catalog to view.
Price range
Delivery Time
Applications/Examples of results
【Applications】 ・Insulating deposition for FPD (NSG) ・Oxide semiconductor TFT passivation deposition (NSG)
