[Analysis Case] Power Device
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[Analysis Case] Power Device
We will introduce examples of power device analysis.
31~60 item / All 91 items
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[Analysis Case] Quality Evaluation of SiC Substrates
Evaluation of crystal orientation, in-plane defect distribution, surface roughness, and impurities.
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[Analysis Case] Evaluation of Carrier Density Distribution in Power Devices
Evaluation of the activation rate of the Dopant is possible.
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[Analysis Case] Evaluation of Dopant and Carrier Concentration Distribution in Power Devices
Evaluation of activation rate is possible through composite analysis.
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[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure
It is possible to obtain the impurity profile in the GaN-based LED structure from the backside.
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Interference peak removal process in quantitative analysis
X-ray photoelectron spectroscopy (XPS)
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Regarding the depth conversion of SRA
SRA: Spread Resistance Measurement Method
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About the concentration conversion of SRA.
SRA: Spread Resistance Measurement Method
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Large-diameter imaging SIMS using RAE detectors
SIMS: Secondary Ion Mass Spectrometry
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Precautions for Low-Temperature Photoluminescence Measurement
Photoluminescence method
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[Analysis Case] Evaluation of Composition and Bonding State of GaN Film by XPS
Evaluation will be conducted under measurement conditions tailored to the purpose.
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[Analysis Case] Removal of Organic Contaminants by Etching
We will remove surface contamination and conduct an evaluation using XPS.
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Valence evaluation of metal oxides by chemical shift
XPS: X-ray Photoelectron Spectroscopy
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Types and Characteristics of Electron Diffraction
TEM: Transmission Electron Microscopy
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[Analysis Case] Polarity Evaluation of GaN by ABF-STEM Observation
Atomic-level observation is possible with the Cs collector-equipped STEM.
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[Analysis Case] Evaluation of High Electron Mobility Transistors
Evaluation of crystal coherence and compositional distribution is possible with Cs collector attached STEM.
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[Analysis Case] Ultra-high Sensitivity Measurement of Impurities in SiC Using SIMS
Evaluates bulk concentrations at the ppb to ppt level.
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[Analysis Case] Evaluation of Impurity Concentration in Gallium Oxide Ga2O3 Films Using SIMS
It is possible to quantitatively evaluate impurity elements.
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[Analysis Case] Low-Temperature PL Spectrum of Si After Ion Implantation Annealing Treatment
It is possible to confirm the recovery of crystallinity due to irradiation defects and annealing.
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[Analysis Case] Evaluation of Metal Element Concentration Near the Surface of Gallium Oxide Ga2O3 Film
High sensitivity analysis even in extremely shallow areas.
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[Analysis Case] Evaluation of Silicon Oxide Film by XAFS
Local structural analysis around silicon, quantification of intermediate oxides, evaluation of bulk and interfaces.
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[Analysis Case] Evaluation of the Diffusion Layer of SiCMOSFET Using SCM and SMM
You can evaluate the p/n polarity and carrier concentration distribution of the SiC device's diffusion layer.
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[Analysis Case] Evaluation of Carrier Concentration Distribution in Si-IGBT Chips
SRA evaluation of field stop layers and lifetime killers.
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[Analysis Case] Evaluation of Organic Contamination of Wafers in Wafer Cases
You can evaluate the causes and total amount of organic contamination in the manufacturing process.
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[Analysis Case] Band Gap Evaluation of Oxidized and Nitrided Thin Films
High-precision band gap evaluation is possible through combined analysis of XAFS and XPS.
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Examples of TDS analysis by representative materials and purposes
TDS: Thermal Desorption Gas Analysis Method
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[Analysis Case] Evaluation of GaN Crystal Growth by XRD and EBSD
Cross-sectional mapping allows for the evaluation of the crystal growth of GaN.
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[Analysis Case] Evaluation of Ion Implantation Damage in GaN by XAFS
It is possible to confirm the recovery of crystallinity due to irradiation defects and annealing.
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[Analysis Case] Evaluation of Gold Thin Film Adhesion on Wafer by XRF
Comparison of the amount of thin film components adhered between samples.
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[Analysis Case] In-plane film thickness evaluation of Au thin film on wafer using XRF.
Visualization of film thickness distribution through multi-point mapping measurement.
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[Analysis Case] Evaluation of Si-based IGBT Chip Cross-section by Low-Temperature Micro Photoluminescence Analysis
It is possible to confirm the influence of the lifetime killer from the cross-sectional direction.
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