[Analysis Case] Power Device
![[Analysis Case] Power Device](https://image.mono.ipros.com/public/premium/image_category/099/387108/IPROS149406763782833838.jpg?w=140&h=140)
[Analysis Case] Power Device
We will introduce examples of power device analysis.
61~90 item / All 91 items
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[Analysis Case] Evaluation of Interstitial Carbon in Si Substrate Using Low-Temperature PL and SIMS Analysis
It is possible to confirm the trace amounts of carbon contained in the Si substrate.
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[Analysis Case] Evaluation of Crystal Defects in SiC Power Devices Using PL and TEM
High-resolution TEM observation of crystal defects detected by PL mapping.
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[Analysis Case] Analysis of the adhesive sheet components of the wafer
Evaluation of organic pollution's qualitative, quantitative, and distribution aspects using a combination of multiple methods.
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The influence of adsorbed oxygen in XPS.
XPS: X-ray Photoelectron Spectroscopy
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Evaluation methods for organic compounds in clean rooms
GC/MS: Gas Chromatography-Mass Spectrometry
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[Analysis Case] Stress Evaluation by Raman Mapping
It is possible to confirm the stress distribution in the sample cross-section.
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[Analysis Case] High Sensitivity Evaluation of SNDM's SiCMOS
The diffusion layer structure of SiC devices can be visualized (high-sensitivity evaluation of the diffusion layer structure).
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[Analysis Case] Non-destructive 3D Structural Observation of SiC Discrete Packages
Non-destructive three-dimensional observation of the internal structure of a discrete package.
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[Analysis Case] Evaluation of Surface Roughness of SiC Trench MOSFET Trench Sidewalls
Quantitative evaluation of the roughness of trench sidewalls related to device characteristics.
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[Analysis Case] STEM/EDX and Image Simulation for Crystal Structure Evaluation
The evaluation of the crystal structure can be performed based on the STEM images and the results of atomic composition measurements.
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[Analysis Case] SiC by SMM and SNDM
You can evaluate the p/n polarity and carrier concentration distribution of the diffusion layer in SiC devices.
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[Analysis Case] Electronic State Evaluation of Wide Bandgap Semiconductor Dopant Site Identification
Evaluation of microscopic atomic structures is possible through computational simulation.
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[Analysis Case] Quantitative Analysis of Low Molecular Weight Siloxanes
We will quantify the siloxanes in the exhaust gas at the ng level.
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[Analysis Case] Component Analysis of Water Repellent Areas
TOF-SIMS enables wide-area imaging evaluation of multiple components.
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[Analysis Case] Depth Profile Concentration Analysis of Mg in Deep Ultraviolet LEDs
Quantification of impurities in AlGaN with various Al compositions is possible.
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Rietveld analysis refers to
Detailed information such as atomic arrangements within the crystal can be obtained from the analysis of measurement data like XRD.
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Case studies related to EV (Electric Vehicle) analysis
Analyze the EVolution of EV development!
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[Analysis Case] Evaluation of Carrier Lifetime through Photoluminescence Lifetime Measurement
Insights into the carrier lifetime of SiC can be obtained from the luminous lifetime.
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[Analysis Case] Measurement of Impurity Concentration on the Surface and Inside of SiC Substrates
Analysis of the substrate surface and interior is separated using ICP-MS and GDMS.
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[Analysis Case] Solder Wetting Test for Semiconductor Packages
It is possible to conduct solder wetting tests on electrodes after accelerated degradation testing.
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[Analysis Case] Evaluation of Two-Dimensional Electron Gas Layer in Normally Off GaN HEMT
We can offer a one-stop solution for comprehensive analysis of product research.
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[Analysis Case] Trench-type Si-MOSFET IDSS Leakage Location Analysis
One-stop service from identifying device defects to analyzing causes.
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[Analysis Case] Surface Shape Analysis of GaN Substrates
Visualization of step-terrace structures by AFM.
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[Analysis Case] Failure Analysis of SiC Transistor using Slice & View
Check the leak path by 3D visualization of SEM images.
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[Analysis Case] Component Analysis of Leakage Areas in SiC Power Transistors
It is possible to perform magnified observation and EDX analysis at the gate destruction location identified by Slice & View.
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List of reliability tests
Reliability Test
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Evaluation avoiding duplication of Oji Peak by HAXPES.
Comparison of spectra obtained from Ga line (HAXPES) and Al line/Mg line (XPS) measurements.
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[Analysis Case] STEM, EBSD Image Simulation for Polycrystalline Structure Analysis
Evaluation of crystal forms using simulations.
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[Analysis Case] Evaluation of Metal Impurities in the Metal Film and Interface of the Device
Impurities in films and interfaces such as plating can be evaluated using TOF-SIMS.
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[Analysis Case] Evaluation of DC Voltage Dependence of Carriers in Semiconductors
We will introduce an analysis case using Si samples with known carrier concentration!
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