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511~540 item / All 737 items
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[Analysis Case] Ginseng - LC/MS/MS Analysis of Herbal Components
Simultaneous analysis of six types of ginsenosides (Rb1, Rc, Rd, Re, Rg1, Rg3)
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[Analysis Case] Numerical Evaluation of Active Material Volume by Three-Dimensional SEM
It is possible to calculate the volume of each substance from Slice&View data.
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[Analysis Case] Evaluation of Material Distribution of Lithium-Ion Secondary Battery Cathode Materials
Mapping the conductivity of cathode materials using SSRM.
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[Analysis Case] Composite Evaluation of Zn-based Buffer Layer Using X-rays
Evaluation of composition, bonding state, structure, and density is possible.
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[Analysis Case] Evaluation of Metal Films by High-Temperature XRD
Tracking evaluation of phase transitions and crystallinity changes during the heating process.
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Quantification of Hydrogen Bonding States in SiN Films
Quantification of Si-H and N-H in SiN films using infrared absorption method.
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[Analysis Case] Elemental Analysis of Eyeshadow Components using TEM, EDX, and EELS
Capable of nano-order morphological observation and elemental analysis.
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[Analysis Case] Evaluation of Liquid Crystal Structure and Micelle Size of Emulsifiers by SAXS
Capable of structural analysis at the nanoscale and evaluation of nanoparticle size.
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[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS 2
Measurements will be taken according to the analysis conditions suited to the purpose.
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[Analysis Case] Analysis of the Multilayer Structure of Polymer Films
Clear visualization of the layer structure of multilayer films using low-damage sputtering with GCIB.
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[Analysis Case] Observation of Puff Surface Shape
Observation of the puff surface using a digital microscope.
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[Analysis Case] Concentration Analysis of Harmful Components in Food
Evaluation of melamine concentration in infant formula milk powder
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[Analysis Case] Composition Analysis of Compound Semiconductors by SIMS
Capable of evaluating the composition of the main elemental components of compound semiconductors in the depth direction.
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Analysis case: Evaluation of the in-plane distribution of additives in solder alloys.
Capable of highly sensitive evaluation of the distribution of additives at the ppm level.
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[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure
It is possible to obtain the impurity profile in the GaN-based LED structure from the backside.
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[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS
Capable of evaluating the composition of the main elemental components of GaN-based LEDs in the depth direction.
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[Analysis Case] Evaluation of the Cleaning Effect of Organic Ingredients
You can measure the 300mm wafer as it is.
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[Analysis Case] SSDP-SIMS Analysis on SiC Substrates
It is possible to obtain the dopant concentration profile from the SiC substrate side.
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[Analysis Case] Evaluation of Gate Oxide Film on SiC Substrate
Evaluate film thickness, density, and bonding state.
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[Analysis Case] Evaluation of Foreign Substances on the Surface of 300mm Wafers
The coordinate linkage function with the foreign object inspection device allows for the evaluation of specific foreign objects.
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[Analysis Case] SIMS Analysis of Compound Layered Structure Samples
Analysis is possible after selectively removing the compound layer through preprocessing.
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[Analysis Case] Evaluation of Dopant and Carrier Concentration Distribution in Power Devices
Evaluation of activation rate is possible through composite analysis.
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[Analysis Case] Evaluation of Carrier Density Distribution in Power Devices
Evaluation of the activation rate of the Dopant is possible.
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[Analysis Case] Quality Evaluation of SiC Substrates
Evaluation of crystal orientation, in-plane defect distribution, surface roughness, and impurities.
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[Analysis Case] Dopant Investigation in NPT-IGBT Using SIMS
Evaluation of localized elements is possible with imaging SIMS.
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[Analysis Case] Depth Profile Concentration Analysis of Impurities in GaN-based LEDs Using SIMS
Measurements will be taken under analysis conditions suited to the purpose.
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[Analysis Case] Evaluation of Element Distribution in Textured GaN-based LEDs
Even with a structure that has uneven surfaces, depth distribution evaluation is possible through flattening processing.
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[Analysis Case] Diffusion Evaluation of Ga and Al in Si Substrate using SSDP-SIMS
Measurement avoiding the influence of high concentration layers using SSDP-SIMS.
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[Analysis Case] SIMS Measurement of Specially Shaped Samples
Analysis is possible even for special shapes through innovative fixing methods.
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[Analysis Case] Evaluation of Si Natural Oxidation Film Thickness
Estimation of film thickness using the average free path of photoelectrons.
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