Grinding processing examples of SiC
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Achieving double-sided grinding of SiC! Double-sided grinding processing.
In power devices such as SiC (silicon carbide) and GaN (gallium nitride), which are expected to see market expansion in the future, cost reduction is an important issue. Among these, we would like to introduce a processing case that achieved cost reduction through a method different from conventional processing processes. [Polishing Results] ■ Surface roughness < 0.5nm (subsequent process CMP) ■ TTV < 2μm / Warp < 10μm ■ Achieved double-sided grinding of SiC by using the high-speed pressure grinding machine 'EJD-6BY' and the fixed grinding stone 'MAD Plate'. *For more details, please refer to the PDF document or feel free to contact us.
basic information
【Device Specifications】 ■Material/Dimensions: SiC (Silicon Carbide/2 inch) ■Applications: Power devices, high-frequency devices, optical devices ■Required Precision: Surface roughness < 1nm, TTV < 2μm/Warp < 10μm ■Device Model: EJD-6BY ■Device Specifications: Double-sided lapping machine ■Polishing Method: Fixed abrasive MAD Plate, ultra-fine diamond abrasive *For more details, please refer to the PDF document or feel free to contact us.
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Applications/Examples of results
For more details, please refer to the PDF document or feel free to contact us.
