Hayashi Pure Chemical Ind., Ltd. Electronic Materials Official site

Al and Al alloy films are anisotropically etched well without corrosion.

Etch the Al or Al alloy film at the desired taper angle.

The surface of the AlGaInP film can be effectively roughened through etching, which improves the light extraction efficiency.

The surface of the GaP film and the surfaces, slopes, and sides of the GaP substrate can be effectively roughened through etching, improving the light extraction efficiency.

The surfaces of AlGaAs films, GaAs films, and GaAs substrates can be effectively roughened through etching, improving light extraction efficiency.

Al and Al alloy films are etched well without corroding the insulating film. We have products for etching processing and for removing Si natural oxide films.

The surface of the GaN (N-face) film can be effectively roughened through etching, improving the light extraction efficiency.