Epitaxial-EB deposition device
A high-temperature process of up to 900°C is possible! This product is suitable for single crystal film formation due to the epitaxial promotion mechanism.
The "Epitaxial-EB Deposition Device" is a product suitable for single crystal film formation of metal films and oxide films through an epitaxial promotion mechanism. It achieves excellent film thickness distribution and reproducibility through substrate rotation, and the maintenance of the chamber is easy. It also supports the lift-off process and reduces particles through appropriate surface treatment. Multi-chamber specifications and batch types can also be manufactured. 【Features】 ■ Oxidation-promoting gas introduction mechanism ■ Material oxidation prevention mechanism ■ Capable of high-temperature processes up to 900°C ■ Supports high vacuum processes with a load-lock system ■ Compatible with lift-off processes ■ Supports tray transport *For more details, please refer to the PDF document or feel free to contact us.
basic information
【Specifications】 ■Board size: Maximum φ12 inches ■Board heating temperature: 700℃ (board surface) ■Deposition materials: Metals or oxides ■Vacuum exhaust: CP+DP ■Film thickness control: Quartz film thickness sensor ■Control operation ・Control: PLC ・Operation: Touch panel or PC ■Data logging: External memory or PC ■Board transport: Vacuum transport robot ■Options: Board heating 900℃ (board surface), board cooling, board bias, board rotation Resistance heating evaporation source (up to 6 units), reactive gas supply unit, etc. *For more details, please refer to the PDF document or feel free to contact us.
Price range
Delivery Time
Applications/Examples of results
【Applications】 ■LED elements ■Electronic components ■Optical components ■MEMS ■Power devices *For more details, please refer to the PDF document or feel free to contact us.
