Wafer surface defect inspection device with review function
Equipped with a review microscope! Defects detected can be observed in real-time with the microscope.
By irradiating a high-power laser onto a wafer on a rotating stage, the entire surface is inspected at high speed, allowing for the detection of minute defects. By combining multiple channels such as scattering, reflection, and phase shift, defect detection suitable for various applications can be achieved, enabling discrimination by defect type such as unevenness. ■ Features of the device - High-speed inspection (approximately 181 seconds/12 inches) - Equipped with a review microscope - The microscope can be selected as either a laser microscope or a differential interference microscope - High-precision scribing using the microscope for analysis with SEM, etc. - Optional edge inspection functionality is available
basic information
【Detection】 Method: Laser scattering method and specular reflection method Detection size: Defects equivalent to PSL 50nm 【Review Function】 Microscope: Laser microscope (laser confocal, white light interference) or differential interference microscope 【Target Substrate】 Type: Various substrates including transparent materials Size: 2 to 12 inches, shape and other details can be discussed separately 【Equipment Size】 External dimensions: W1,800 x D2,100 x H1,985 (mm) Weight: Approximately 1200kg
Price information
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Delivery Time
Model number/Brand name
K-LE-G200
Applications/Examples of results
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