All products and services
571~600 item / All 788 items
-

[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS 2
Measurements will be taken according to the analysis conditions suited to the purpose.
last updated
-

[Analysis Case] Analysis of the Multilayer Structure of Polymer Films
Clear visualization of the layer structure of multilayer films using low-damage sputtering with GCIB.
last updated
-

[Analysis Case] Observation of Puff Surface Shape
Observation of the puff surface using a digital microscope.
last updated
-

[Analysis Case] Concentration Analysis of Harmful Components in Food
Evaluation of melamine concentration in infant formula milk powder
last updated
-

[Analysis Case] Composition Analysis of Compound Semiconductors by SIMS
Capable of evaluating the composition of the main elemental components of compound semiconductors in the depth direction.
last updated
-

Analysis case: Evaluation of the in-plane distribution of additives in solder alloys.
Capable of highly sensitive evaluation of the distribution of additives at the ppm level.
last updated
-

[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure
It is possible to obtain the impurity profile in the GaN-based LED structure from the backside.
last updated
-

[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS
Capable of evaluating the composition of the main elemental components of GaN-based LEDs in the depth direction.
last updated
-

[Analysis Case] Evaluation of the Cleaning Effect of Organic Ingredients
You can measure the 300mm wafer as it is.
last updated
-

[Analysis Case] SSDP-SIMS Analysis on SiC Substrates
It is possible to obtain the dopant concentration profile from the SiC substrate side.
last updated
-

[Analysis Case] Evaluation of Gate Oxide Film on SiC Substrate
Evaluate film thickness, density, and bonding state.
last updated
-

[Analysis Case] Evaluation of Foreign Substances on the Surface of 300mm Wafers
The coordinate linkage function with the foreign object inspection device allows for the evaluation of specific foreign objects.
last updated
-

[Analysis Case] SIMS Analysis of Compound Layered Structure Samples
Analysis is possible after selectively removing the compound layer through preprocessing.
last updated
-

[Analysis Case] Evaluation of Dopant and Carrier Concentration Distribution in Power Devices
Evaluation of activation rate is possible through composite analysis.
last updated
-

[Analysis Case] Evaluation of Carrier Density Distribution in Power Devices
Evaluation of the activation rate of the Dopant is possible.
last updated
-

[Analysis Case] Quality Evaluation of SiC Substrates
Evaluation of crystal orientation, in-plane defect distribution, surface roughness, and impurities.
last updated
-

[Analysis Case] Dopant Investigation in NPT-IGBT Using SIMS
Evaluation of localized elements is possible with imaging SIMS.
last updated
-

[Analysis Case] Depth Profile Concentration Analysis of Impurities in GaN-based LEDs Using SIMS
Measurements will be taken under analysis conditions suited to the purpose.
last updated
-

[Analysis Case] Evaluation of Element Distribution in Textured GaN-based LEDs
Even with a structure that has uneven surfaces, depth distribution evaluation is possible through flattening processing.
last updated
-

[Analysis Case] Diffusion Evaluation of Ga and Al in Si Substrate using SSDP-SIMS
Measurement avoiding the influence of high concentration layers using SSDP-SIMS.
last updated
-

[Analysis Case] SIMS Measurement of Specially Shaped Samples
Analysis is possible even for special shapes through innovative fixing methods.
last updated
-

[Analysis Case] Evaluation of Si Natural Oxidation Film Thickness
Estimation of film thickness using the average free path of photoelectrons.
last updated
-

[Analysis Case] Evaluation of Impurities in Metal Wires
Visualizing the in-plane distribution of impurities such as atmospheric components with a field equivalent to SEM.
last updated
-

[Analysis Case] Photoluminescence Mapping Measurement of SiC Diodes
Detection cases of stacking faults in SiC.
last updated
-

[Analysis Case] Evaluation of SUS Passive Film Depth Direction State and Oxide Film Thickness
It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.
last updated
-

[Analysis Case] Distribution and State Evaluation of OH on Aluminum (Al) Surface
It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.
last updated
-

[Analysis Case] Evaluation of Silicon (Si) Oxide Film State
It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.
last updated
-

[Analysis Case] Evaluation of Electrode Materials for Lithium-Ion Secondary Batteries
Cross-sectional observation using atmosphere-controlled ion polishing (IP) processing is possible.
last updated
-

[Analysis Case] Evaluation of Lithium-Ion Secondary Battery Separators
Cool the sample and evaluate the shape of the separator more accurately.
last updated
-

[Analysis Case] Evaluation of Si Anode in Lithium-Ion Secondary Batteries
It is possible to evaluate the structure of the Si anode after charging through sample cooling.
last updated