Horizontal vapor deposition device
Double-sided film formation, edge film formation, compact, large batch processing. The substrate's self-rotation mechanism enables control of the deposition surface. Providing unique processes for quartz oscillators and thin-film resistors.
Equipped with a unique substrate mechanism ideal for double-sided film deposition on small substrates and small-diameter wafers, edge film deposition on ceramic substrates, and mask film deposition. A standard horizontal deposition device with a large processing capacity in a compact chamber. Various options for evaporation sources, heating temperatures, and exhaust systems are available. Capable of handling a wide range of applications from resin decoration to mass production of electrode formation for electronic components with a proven unique mechanism.
basic information
From a diameter of φ750 to a maximum of φ1000, the optimal processing amount and various mechanisms such as evaporation sources can be selected according to the substrate size and production volume. The addition of an ion plating mechanism enables improved adhesion of the film and the formation of reactive generated films. It is possible to form thin films with high rates and low damage, such as nitride films, oxide films, and high-adhesion electrode films, compared to sputtering.
Price information
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Delivery Time
Model number/Brand name
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Applications/Examples of results
Formation of crystal oscillator electrodes Thin film resistance electrode end face electrode resistance film formation Discrete IC electrodes (back surface electrodes, plated seed film formation) Thermal print head electrode and protective film formation
