Plasma etching device "EXAM" sample testing now accepting applications.
A compact batch-type plasma etching device that supports sub-micron etching and features process support through sample testing.
Supports etching of submicron Si oxide films in batch type. Compatible not only with SiN and Si-based thin films but also with high melting point metals and difficult-to-etch materials. Ideal for processing niche devices such as vertical etching of quartz and fine processing of thick photoresist. Actively supports a wide range of applications from ashing to cleaning through a multi-step process enabled by plasma mode switching.
basic information
Standard Specifications Stage Dimensions: 250 mm□ Etching Method: RIE CF Gas Standard Simple mechanism allows switching between RIE/DP modes Stage temperature control (water cooling/heating) selectable Compatible with larger stage dimensions (up to 500 mm□)
Price information
Please feel free to contact us.
Delivery Time
Applications/Examples of results
MEMS sensor etching: SiN SiO2, Si Electronic component etching: SiO2 Pre-deposition light etching of semiconductor wafers (removal of natural oxide film) Imprint mold thick film resist patterning MEMS/semiconductor resist ashing and descumming
