Batch type SWP assembling device
Damage-free, high rate, large area compatible, complete removal of ion damage, achieving complete radical processing. High-performance plasma ashing device.
High-density plasma generated by surface wave excited plasma is completely shielded from ions using an ion shielding trap. Only radicals are supplied to the substrate. Achieves damage-free ashing equivalent to wet processes with high-density radicals. Balances high rate and damage-free ashing. Compact batch type suitable for small substrates, compound semiconductors, and MEMS devices. Demonstrates excellent effectiveness in removing organic film sacrificial layers in MEMS manufacturing processes. An essential resist ashing device for high-end MEMS devices.
basic information
Equipped with a φ300mm processing stage. Supports batch processing of small substrates. High-rate ashing with O₂ for the removal of organic films and materials such as resist and polyimide. Capable of not only removing organic materials from the substrate but also oxidizing the substrate. The use of H₂ gas as an option allows for the removal of surface oxidation films from solder. Effective for the removal of surface oxidation films and reduction cleaning of bumps and pads on wafers and substrates. Optionally compatible with a large stage (400×500mm).
Price information
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Delivery Time
Applications/Examples of results
Compound semiconductor Resist ashing, descum, pre-film cleaning MEMS sensor Organic film sacrificial layer removal, polyimide removal Optical module Embedded resist removal
